Metal-insulator-semiconductor (MIS) grid enhanced high electron mobility transistor (HEMT) device based on gallium nitride (GaN) and manufacture method of MIS grid enhanced HEMT device

Abstract

The invention discloses a metal-insulator-semiconductor (MIS) grid enhanced high electron mobility transistor (HEMT) device based on gallium nitride (GaN) and a manufacture method of the MIS grid enhanced HEMT device and mainly solves the problems that the current density and the reliability of the existing GaN base enhanced device are low. The device is structurally characterized in that a transition layer (2) and a GaN main buffer layer (3) are sequentially arranged on a substrate (1), the middle of the GaN main buffer layer (3) is provided with a groove (11), an AlGaN main barrier layer (4) is arranged above the GaN main buffer layer arranged at two sides of the groove, a GaN sub buffer layer (5) and an AlGaN sub barrier layer (6) are sequentially arranged on the surface of the AlGaN main barrier layer (4) arranged above the groove inner wall and the two sides of the groove, the two sides of the top end of the AlGaN sub barrier layer (6) are respectively a source electrode (8) and a drain electrode (9), a medium layer (7) is arranged outside the source electrode and the drain electrode, a grid electrode (10) is arranged on the medium layer (7) and covers the whole groove region, and the mature flow process is adopted for the whole device manufacture. The MIS grid enhanced HEMT device has the advantages that the enhanced type characteristics are good, the current density is high, the breakdown voltage is high, and the device reliability is high. The MIS grid enhanced HEMT device can be used in high-temperature high-frequency high-power devices, high-power switches and digital circuits.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor device and a manufacturing process, in particular to a metal insulator semiconductor MIS gate-enhanced high electron mobility transistor HEMT device and a manufacturing method based on a GaN material, which can be used for high-temperature, high-frequency, high-power applications as well as high power switching and digital circuits. Background technique [0002] GaN is a new type of wide band gap compound semiconductor material, which has excellent characteristics that many silicon-based semiconductor materials do not have, such as a wide band gap of 3.14eV, up to 3×10 6 V / cm breakdown electric field, high thermal conductivity, corrosion resistance and radiation resistance. More importantly, GaN materials can form AlGaN / GaN heterojunction structures, which can obtain higher than 1500cm 2 / Vs electron mobility, and up to 3×10 7 cm / s saturation electron ve...

AI Technical Summary

Problems solved by technology

[0011] First, the increase of threshold voltage is often at the expense of reducing the current density, and it is difficult to achieve the coexistence of high threshold voltage and high current density;

[0012] Second, whether etching to form trench gates or fluorine ion implantation will cause damage to the material, although a certain amount of damage can be eliminated after annealing, the remaining damage will still affect device performance and reliability. At the same time, the repeatability of this process is still low. not tall;

[0013] The third is that the process of making short-channel devices with short gate lengths is relatively difficult, resulting in low reliability of the devices

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