Transfer method in back implant process of thinned silicon wafer

Abstract

The invention discloses a conveying method of a back surface injection technology for a thinned silicon wafer. The conveying method comprises the following steps of S1, providing a silicon wafer whichis thinned by a taiko thinning technology; S2, placing the front surface of the silicon wafer onto an electrostatic chuck; setting the electrostatic chuck as follows: S21, setting the position of a discharging needle, enabling the discharging needle to directly touch a support ring, and ensuring that the discharging needle is completely in contact with the non-contact position of the front surface of the silicon wafer; S22, setting the power source voltage mode of the electrostatic chuck by a method of reducing primary bounce quantity and eliminating secondary bounce quantity; S3, according to the setting power source voltage mode, setting the power source voltage, and completing the ion injection at the back surface; S4, fetching out the wafer. The conveying method has the advantage thatthe primary bounce quantity is reduced, the secondary bounce quantity is eliminated, and the electrostatic residues before wafer fetching can be eliminated, so as to avoid the falling of the wafer inthe conveying process after the ion injection at the back surface of the silicon wafer is completed.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor integrated circuit, in particular to a transmission method in the back implantation process of a thinned silicon chip. Background technique [0002] Ion implantation is one of the key processes in semiconductor manufacturing. Ion implantation achieves precise control of the carrier concentration of the substrate material by controlling the dose of dopant atoms. In the development of power devices, vertical components have thicker drift regions. In high-voltage applications, vertical components have broad application prospects. In the vertical device manufacturing process, it is necessary to lead out the drain of the device from the back of the wafer. The material of the wafer in the existing integrated circuit manufacturing is usually silicon, so the wafer is also usually called a silicon wafer. In order to reduce the contact resistance, ion implantation on the back of the wafer is r...

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Problems solved by technology

At the same time, this silicon wafer needs to be thinned to a thickness of 100 microns to 200 microns, which is a severe challenge for the transfer mechanism of the implanter.

[0003] The transfer method of ordinary ion implanters is mainly aimed at the front-side implantation of ordinary wafers from the beginning of the design, and the implanter specially designed for back-side implantation is expensive and costly; the existing ordinary implanter for silicon wafer front-side implantation When performing implantation on the back of thin silicon wafers, due to stress and electrostatic residue problems, the thin wafers are likely to fall off, so that the normal implantation process cannot be completed

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