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Manufacture method of semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems that the existing technology cannot fully meet, damage the underlying layer, etc.

Inactive Publication Date: 2018-06-29
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in at least some cases, removing one or more layers of a bilayer or multilayer photoresist structure may also etch (ie, damage) underlying layers.
[0004]As a result, existing technology cannot fully satisfy all aspects

Method used

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  • Manufacture method of semiconductor device
  • Manufacture method of semiconductor device
  • Manufacture method of semiconductor device

Examples

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Embodiment Construction

[0031] Different embodiments or examples provided below may implement different configurations of the present invention. The examples of specific components and arrangements are used to simplify the invention and not to limit the invention. For example, a statement that a first structure is formed on a second structure includes direct contact between the two, or there are other additional structures between the two instead of direct contact. In addition, numbers may be repeated in various examples of the present invention, but these repetitions are only for simplification and clarity of description, and do not mean that units with the same numbers in different embodiments and / or arrangements have the same corresponding relationship.

[0032] In addition, spatial relative terms such as "beneath", "beneath", "below", "above", "above", or similar terms may be used to simplify the relationship between one element and another element in the illustrations. relative relationship. S...

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Abstract

Provided is a semiconductor device and a manufacture method of the semiconductor, wherein the method includes forming a silicon-based resin over a substrate. In various embodiments, the silicon-basedresin includes a nitrobenzyl functional group. In some embodiments, a baking process is performed to cross-link the silicon-based resin. Thereafter, the cross-linked silicon-based resin is patterned and an underlying layer is etched using the patterned cross-linked silicon-based resin as an etch mask. In various examples, the cross-linked silicon-based resin is exposed to a radiation source, thereby de-cross-linking the silicon-based resin. In some embodiments, the de-cross-linked silicon-based resin is removed using an organic solution.

Description

technical field [0001] Embodiments of the present invention relate to a method for fabricating a semiconductor device, and more particularly relate to the material composition of a part of the lithography process. Background technique [0002] The electronic industry has an increasing demand for smaller and faster electronic devices, and the electronic devices simultaneously provide a large number of complex functions. To sum up, the continuous trend of the semiconductor industry is to manufacture low-cost, high-performance, and low-power integrated circuits. These long-range goals can be achieved by shrinking the integrated circuit size (eg, minimum structure size) of semiconductors, thereby improving throughput and reducing associated costs. However, shrinking the size also increases the complexity of the IC manufacturing process. In order to achieve continued advances in semiconductor integrated circuits and devices, similar advances in semiconductor processes and techn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027
CPCH01L21/0275C08G77/26C08G77/80C09D183/08H01L21/02126H01L21/02216H01L21/02282H01L21/0274H01L21/0332H01L21/31111C08G77/16C08G77/52C08G77/70H01L21/3081
Inventor 刘朕与张庆裕林进祥
Owner TAIWAN SEMICON MFG CO LTD
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