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Silicon nitride optical waveguide device and graphene detector integrated chip and manufacturing method thereof

A technology of waveguide devices and silicon nitride optics, applied in the direction of optical waveguides, light guides, optical components, etc., can solve the problems of high cost and difficult process, achieve wide electrical bandwidth, wide light absorption wavelength range, and simple device structure Effect

Active Publication Date: 2020-08-11
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Description
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  • Application Information

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Problems solved by technology

[0004] The present invention proposes a silicon nitride optical waveguide device and a graphene detector integrated chip and its manufacturing method, and its purpose is to address the difficulty and high cost of the existing indium phosphide detector and silicon-based optical waveguide device integrated chip process problem, it is proposed to adopt the method of integrating graphene detector and silicon nitride-based optical waveguide device, in which the silicon nitride optical waveguide device processes the optical signal, and the graphene detector performs photoelectric conversion on the processed optical signal, so as to realize a single On-chip integrated optical signal processing functional unit and chip

Method used

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  • Silicon nitride optical waveguide device and graphene detector integrated chip and manufacturing method thereof
  • Silicon nitride optical waveguide device and graphene detector integrated chip and manufacturing method thereof
  • Silicon nitride optical waveguide device and graphene detector integrated chip and manufacturing method thereof

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Embodiment

[0045] A silicon nitride optical waveguide device and a graphene detector integrated chip, its structure includes a silicon nitride vertical coupling grating 1, a silicon nitride optical waveguide device 2 and a graphene detector 3; wherein the silicon nitride vertical coupling grating is a light The signal input port is connected to the A multimode interference coupler 6A in the silicon nitride optical waveguide device 2. The silicon nitride optical waveguide device 2 processes the optical signal, and passes through the B multimode interference in the silicon nitride optical waveguide device 2. The coupler 6B is connected and transmits the processed optical signal to the graphene detector 3, and the graphene detector 3 performs photoelectric conversion on the processed optical signal.

[0046] The silicon nitride vertical coupling grating 1 has a grating period of 1.1 micrometers, a duty cycle of 50%, and an etching depth of 300 nanometers.

[0047] The silicon nitride optica...

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Abstract

The invention is an integrated chip of a silicon nitride optical waveguide device and a graphene detector and a manufacturing method thereof, and its structure includes a silicon nitride vertical coupling grating, a silicon nitride optical waveguide device and a graphene detector; The coupling grating is the optical signal input port, connected to the silicon nitride optical waveguide device; the silicon nitride optical waveguide device processes the optical signal, connects and transmits the processed optical signal to the graphene detector, and the graphene detector light signal for photoelectric conversion. Advantages: 1) A variety of reconfigurable optical signal processing functions can be realized by designing silicon nitride optical waveguide devices with different structures; 2) Graphene detectors have wider light absorption than traditional indium phosphide-based detectors Wavelength range, wider electrical bandwidth; 3) The structure of the device is simple, which can realize the optical signal processing functional unit and chip integrated on a single chip.

Description

technical field [0001] The invention relates to a silicon nitride optical waveguide device and a graphene detector integrated chip and a manufacturing method, belonging to the technical field of integrated microwave optical signal processing. Background technique [0002] Photon technology has outstanding advantages such as wide bandwidth, low transmission loss, anti-electromagnetic interference, and tunability. The combination of photon technology and radio frequency microwave technology has produced microwave photon technology. By modulating radio-frequency microwave signals on lasers, functions such as signal generation, modulation, processing, and long-distance low-loss transmission can be realized at optical frequencies. It is a key technology leading the future communication industry and military fields such as radar and electronic warfare. Microwave photon signal processing is one of the research hotspots. At present, many photon signal processing functions have been ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/142G02B6/12
CPCG02B6/12004G02B2006/12138G02B2006/12176H01L27/142Y02E10/50
Inventor 顾晓文吴云牛斌曹正义
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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