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Chemical mechanical polishing liquid

A chemical mechanical and polishing liquid technology, which is applied in the direction of polishing compositions containing abrasives, etc., can solve problems such as sedimentation, low concentration of tungsten polishing liquid, loss of polishing performance, etc.

Inactive Publication Date: 2018-07-06
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The tungsten polishing fluid in the prior art does not have a high concentration ratio, because after increasing the concentration ratio, the stability of the formula will be greatly reduced, which is manifested in the increase of abrasive particles, sedimentation, and loss of the original polishing performance

Method used

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  • Chemical mechanical polishing liquid
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Examples

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Embodiment Construction

[0025] All the raw materials used in this example are commercially available, and all components are dissolved and mixed evenly, and the mass percentage is made up to 100% with water. Adjust to the desired pH value with a pH regulator to obtain specific examples as follows.

[0026] Table 1 comparative ratio and embodiment proportioning and concrete implementation result

[0027]

[0028]

[0029] The polishing solutions prepared in the above-mentioned Examples 1-8 and Comparative Example were respectively subjected to chemical mechanical polishing of tungsten, and the polishing effects were compared.

[0030] Polishing conditions: the polishing machine is Mirra, IC1010 polishing pad, the grinding pressure is 3psi, and the polishing droplet velocity is 100ml / min.

[0031] Table 1 is the proportioning and specific implementation results of comparative examples and embodiments. Wherein, comparative example 1 shows that when only abrasive and hydrogen peroxide exist, the ...

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Abstract

The invention provides a chemical mechanical polishing liquid, which contains water, abrasive particles with negative charges on the surface, a compound capable of producing silver ions, a compound capable of producing sulfate ions, and a peroxide. According to the present invention, by changing the charge on the surface of the silica abrasive particles, the stability of the polishing liquid is significantly improved, the polishing stability is further improved, the polishing efficiency is improved, and the polishing cost is reduced.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid for polishing metal tungsten. Background technique [0002] With the continuous development of semiconductor technology and the continuous increase of large-scale integrated circuit interconnection layers, the planarization technology of conductive layers and insulating dielectric layers has become particularly critical. Among them, the chemical mechanical technology pioneered by IBM in the 1980s Polishing (CMP) technology is considered to be the most effective method for global planarization at present. Chemical mechanical polishing (CMP) is a technique for planarization by chemical action, mechanical action, or a combination of these two actions; it usually consists of a grinding table with a polishing pad, and a grinding head for carrying the chip composition. The grinding head fixes the chip, and then presses the front...

Claims

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Application Information

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IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 王晨何华锋李星
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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