A bidirectional transient voltage suppression diode and its manufacturing method
A transient voltage suppression and transient suppression technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of large reverse leakage, poor heat dissipation, complex process, etc., and achieve low contact resistance and heat dissipation performance. The effect of a good, wide process operating window
Active Publication Date: 2021-04-13
BEIJING MXTRONICS CORP +1
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Problems solved by technology
The traditional bidirectional transient voltage suppression diode die process is complicated. On the basis of the unidirectional transient voltage suppression diode die process, double-sided photolithography, chemical plating and other processes are required.
Bidirectional transient voltage suppression diodes with this structure are prone to large reverse leakage, poor heat dissipation, and low reliability. The die is mostly made of modified epoxy resin film, and the packaging form is not suitable for working under harsh environmental conditions.
Method used
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Embodiment Construction
[0038] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:
[0039] Such as figure 1 As shown, the unidirectional transient voltage suppression diode tube core in the present invention includes a silicon chip 1, a passivation protection layer 2, a first electrode and a second electrode, and the first electrode is successively a metal titanium layer 3 and a metal nickel layer from inside to outside. Layer 5 and metal silver layer 4; the same structure as the second electrode and the first electrode, with metal titanium layer 6, metal nickel layer 7 and metal silver layer 8 in sequence from inside to outside.
[0040] Silicon wafer 1 is an N-type silicon wafer, adopting N type, with a thickness of 220 μm, forming a PN junction through diffusion, and passivating the exposed PN junction to form a passivation protection layer 2, with a thickness of 1-2 μm.
[0041] Metal titanium layers 3 and 6 on the surface...
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Abstract
The invention discloses a bidirectional transient voltage suppression diode and a manufacturing method thereof. The tube core is obtained by metallizing a first unidirectional diode tube core, a welding piece and a second unidirectional diode, and then cooling down after heating for a period of time. The first unidirectional diode and the second unidirectional diode have the same structure. The welding temperature between the die and the die of the present invention is relatively high, which provides a wide process operation window for subsequent processes such as die sealing and lead welding, and reduces the influence of the ambient temperature on the die welding structure during assessment and use. . The connection between the dies is the eutectic, and there is no complex phase transition in the solid phase, which has strong stability and improves the reliability of the device. The invention has simple process and low manufacturing cost, and can be used to manufacture bidirectional transient voltage suppression diodes with low leakage current, easy control of clamping voltage, small volume, small thermal resistance and high reliability. The structure is suitable for various packaging forms such as glass packaging, plastic packaging, and metal packaging.
Description
technical field [0001] The invention relates to a bidirectional transient voltage suppression diode and a manufacturing method, belonging to the field of semiconductor devices. Background technique [0002] Due to the advantages of small L size, large peak power, strong anti-surge voltage capability, good breakdown voltage characteristic curve, low zener impedance, small reverse leakage and fast response time to pulses, transient voltage suppression diodes are the solution to electronic problems. It is a high-performance protection device for problems such as circuit on-off, electrostatic discharge, and electromagnetic interference caused by voltage transients and current surges. It is one of the most important electronic components in electronic circuits and has been widely used in various In the fields of civil and military electronics, especially in the fields of aerospace, aviation and weaponry, the requirements for reliability are becoming higher and higher. [0003] M...
Claims
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IPC IPC(8): H01L29/861H01L25/07H01L23/373H01L21/329
CPCH01L23/3736H01L25/074H01L29/66098H01L29/861
Inventor 殷丽刘学明吴立成王传敏
Owner BEIJING MXTRONICS CORP