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InGaN solar cell structure

A solar cell and multi-quantum well structure technology, applied in the field of solar cells, can solve the problems of low efficiency of InGaN solar cells

Inactive Publication Date: 2018-07-10
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0006] The present invention proposes an n-i-p (n region on top) structured InGaN solar cell in order to solve the technical problem of low efficiency of the traditional Ga face polarity p-i-n structure InGaN solar cell

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Embodiment approach

[0036] As a specific implementation, the InGaN solar cell structure further includes: a substrate 01, a nucleation layer 02, and a III-nitride buffer layer 03. The nucleation layer is located on the substrate, and the III-nitride buffer layer is located on the nucleation layer. layer, a p-type GaN layer is located on top of the III-nitride buffer layer. Wherein, the polarity of the nucleation layer and the Group III nitride buffer layer is Ga plane polarity. That is to say, in this embodiment, the InGaN solar cell structure of n-i-p structure is substrate, nucleation layer, III-group nitride buffer layer, p-type GaN layer, i-region light absorption layer, n-type GaN layer. The polarity of each epitaxial layer is the polarity of the Ga surface, and sunlight enters the solar cell from the upper surface.

[0037] Wherein, the substrate 01 is sapphire or silicon carbide or silicon or gallium nitride, and the nucleation layer 02 is gallium nitride or aluminum nitride or aluminum ...

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Abstract

The invention provides an InGaN solar cell structure, and the structure comprises a p-type GaN layer, an i-region light absorbing layer, an n-type GaN layer, and metal electrodes which are respectively plated on the surfaces of the n-type GaN layer and the p-type GaN layer. The i-region light absorbing layer is located above the p-type GaN layer, and the n-type GaN layer is located on the i-regionlight absorbing layer. The polarity of the p-type GaN layer, the i-region light absorbing layer and the n-type GaN layer is Ga plane polarity, and the sunlight is incident on the solar cell structurefrom the upper surface. The structure is characterized in that an epitaxial layer has the Ga plane polarity; an n region is located at an upper part, and a p region is located at a lower part, thereby enabling the total polarized electric field in the light absorbing layer to be in the same direction as a built-in electric field, enabling a polarizing effect not to hinder the separation and conveying of photon-generated carriers, and obtaining an efficient InGaN solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to an InGaN solar cell structure, which adopts a Ga surface polarity cell structure in which the n region is on the upper side and the p region is on the lower side. Background technique [0002] InGaN alloy material has become an important material for full-spectrum solar cells because of its forbidden band width that almost perfectly matches the solar spectrum. In addition, InGaN solar cells have the advantages of high absorption coefficient and strong radiation resistance, and have great application potential in the field of space solar cells. They are the frontier research direction in the field of international photovoltaic cells and nitride materials research. [0003] The forbidden band width of InGaN can change continuously from 0.7eV to 3.4eV with different In components. The light wavelength corresponding to this change range covers all regions of visible l...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/075H01L31/0304
CPCH01L31/03048H01L31/075Y02E10/544Y02E10/548
Inventor 肖红领王琨王权姜丽娟李巍冯春王翠梅王晓亮
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI