Anti-deformation restraint device for integral oxidation of silicon microchannel plate substrate

Abstract

The invention discloses an Si-microchannel plate base integral oxidation anti-deformation constraint device and belongs to the technical field of photoelectron devices, aiming to overcome the defect of deformation of the Si-microchannel plate base due to oxidation. The anti-deformation constraint device is characterized in that a left guard plate and a right guard plate clamp one retainer ring, the guard plates and the retainer ring are made of sapphire crystals and shaped as circular discs having the same outside diameter, the middles of the guard plates are provided with pores uniformly, theguard plates are 2-3mm in thickness, and the retainer ring is 25-30mm in inside diameter and 350-400 microns in thickness; a plurality of clamp slots are uniformly distributed transversely in a groove-shaped horizontal clamp mount, the width of the clamp slots is greater than the total thickness of the two guard plates and the retainer ring by 20-30 microns; the rims of vertical hold-down barrelsare provided with elongated pores; the horizontal clamp mount and the vertical hold-down barrel are both made of quartz glass; the two guard plates and the retainer ring are positioned in one clamp slot or held down by the upper and lower vertical hold-down barrels, and the rims of the two vertical hold-down barrels are in opposite arrangement. The tolerance of flatness of the Si-microchannel plate is smaller than 10 microns after integral oxidation.

Description

technical field [0001] The invention relates to an anti-deformation constraining device for the overall oxidation of a silicon microchannel plate substrate, which belongs to the technical field of optoelectronic devices. Background technique [0002] Compared with lead silicate glass microchannel plate, silicon microchannel plate (Si-MCP) has many advantages, such as high material purity and low background noise; microchannel plate substrate and dynode are fabricated separately; silicon microchannel plate The substrate is resistant to high temperature; the choice of dynode materials and manufacturing processes is wider, which can further reduce MCP noise and increase electronic gain; it is easy to fabricate a small-aperture micro-channel array structure, which improves the resolution of MCP. As an optoelectronic device, the silicon microchannel plate should also be insulated and withstand high voltage. There are reports in the literature, see C P Beetz, J N Milford.Silicon E...

AI Technical Summary

Problems solved by technology

In fact, this is not the case. As mentioned above, the oxidation deformation is due to the volume expansion of the silicon microchannel plate. In this scheme, the silicon microchannel plate is placed freely, and the silicon microchannel plate substrate will still be deformed due to volume expansion.

In addition, in this scheme, long-term oxidation may also cause sintering between the silicon microchannel plate substrate and the silicon wafer or quartz rod, and damage the array structure of the silicon microchannel plate.

Images