Gas-barrier film
A gas barrier and base film technology, applied in the direction of layered products, etc., can solve the problems of gas barrier property drop, gas barrier layer cracks, base film and gas barrier film stress difference, etc., to achieve excellent gas barrier properties and bending resistance sex high effect
Inactive Publication Date: 2018-07-17
KONICA MINOLTA INC
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- Application Information
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Problems solved by technology
Since the base film swells under high temperature and high humidity, there is a difference in film stress between the base film and the gas barrier layer, and the adhesion between the two is likely to decrease
If the adhesion is lowered, when the deformation of the base film due to bending is transmitted to the gas barrier layer, damage such as cracks will easily occur on the gas barrier layer, resulting in a decrease in gas barrier properties.
Method used
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Embodiment
[0136] Hereinafter, the present invention will be specifically described with examples, but the present invention is not limited to these examples. It should be noted that in the examples, the expression "parts" or "%" is used, and unless otherwise specified, it means "parts by mass" or "% by mass".
[0137] 〔Gas barrier film 1〕
[0138] Prepare "KBフィルム with a thickness of 125nm" TM "(Registered trademark) G1SBF (manufactured by KIMOTO) as a base film.
[0139] In this "KBフィルム TM "G1SBF uses hexamethyldisiloxane (HMDSO) and oxygen as raw materials to form a gas barrier layer.
[0140] The gas barrier layer is used as Figure 5 The manufacturing apparatus having the same configuration as shown was formed under the following film forming conditions.
[0141] (Film forming conditions)
[0142] Raw material gas 1: HMDSO
[0143] Raw material gas 2: oxygen
[0144] Supply amount of raw material gas 1: 50sccm (Standard Cubic Centimeter per Minute)
[0145] Supply amount of raw gas 2: 650sccm...
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Abstract
The present invention addresses the problem of providing a gas-barrier film which has excellent gas-barrier properties and has high flex resistance even under high-temperature high-humidity conditions. The gas-barrier film of the present invention comprises a base film and a gas-barrier layer disposed thereon, and is characterized in that the gas-barrier layer comprises Si, O, and C atoms and thatin analysis of a C1s waveform determined by examining the gas-barrier layer by X-ray photoelectron spectroscopy from the surface thereof on the reverse side from the base film to the surface thereofon the base film side over the layer-thickness-direction position range of 0-100%, the gas-barrier layer gives a C-C bond distribution curve having at least one maximal value in a layer-thickness-direction position range of 75 to 100%, the C-C bond distribution curve indicating the proportion of C-C bonds to the total of C-C, C-SiO, C-O, C=O, and C=OO bonds.
Description
Technical field [0001] The present invention relates to a gas barrier film. Specifically, it relates to a gas barrier film having excellent gas barrier properties and high bending resistance even under high temperature and high humidity. Background technique [0002] Conventionally, light-weight and highly flexible gas barrier films have been used for packaging of electronic devices such as organic EL (Electro Luminescence) elements, liquid crystal display elements, and solar cells. The gas barrier film generally has a gas barrier layer formed on a resin base film, and can prevent the penetration of gases such as water and oxygen in the atmosphere. [0003] Gas barrier films used in electronic devices are required to have excellent gas barrier properties, and to maintain excellent gas barrier properties even when used for flexible substrates, high bending resistance is also required. [0004] In order to improve the bending resistance of the gas barrier film, it is known that hexame...
Claims
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IPC IPC(8): B32B9/00
CPCB32B9/00
Inventor 门马千明铃木一生
Owner KONICA MINOLTA INC