Sample table of nano-film material growth device

Abstract

The invention discloses a sample table of a nano-film material growth device and relates to a nano-film material. A substrate support platform, a substrate heater, a vibrator, a thermal metamaterial layer and a bracket are arranged, a platform is embedded in the substrate heater, and the bracket is connected with the lower part of the vibrator; the vibrator is arranged on the back of the substrateheater and connected with the bottom of the substrate heater, and is provided with a cycle counter, a comparator, a register, a vibration motor and a vibration motor circuit, an output end of the counter is connected with the register, the comparator is connected with the counter and outputs data, the vibration motor circuit is connected with the vibration motor, the vibration motor circuit comprises a capacitor, a resistor and a power supply, the power supply is connected with the vibration motor and supplies power to the vibration motor, the cycle counter and the comparator output differentpulses, the vibration motor is operated in different vibration modes based on output pulse width modulated waves with different duty ratios, feedback regulation is performed on vibration, and different vibration modes are adopted for personalized setting of different operation prompts in different scenes.

Description

technical field [0001] The invention relates to a nanometer thin film material, in particular to a sample stage of a nanometer thin film material growth device suitable for regulating the growth of a nanometer thin film crystal material on a molecular beam epitaxy instrument. Background technique [0002] Molecular Beam Epitaxy (MBE) is a method of physically depositing single crystal thin films. The method is to place the semiconductor substrate in an ultra-high vacuum chamber, and place the single crystal material to be grown according to the different elements. In the jet furnace (also inside the cavity). The molecular flow ejected from each element heated to the corresponding temperature can grow an extremely thin (can be as thin as a single atomic layer level) single crystal and a superlattice structure in which several substances alternate on the above substrate. In the ultra-high vacuum chamber, the source material generates molecular beams through high-temperature e...

AI Technical Summary

Problems solved by technology

Due to the simple control of the temperature of the substrate, the growth control of the thin film material is very limited, especially for some specific thin film materials or crystals with specific crystal plane orientations, it is usually difficult to grow high-quality thin films

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