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Photoresist coating process, wetting solvent screening method and wetting solvent

A technology of coating process and screening method, which is applied in the direction of photoplate-making process coating equipment, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems affecting the quality of integrated circuits, poor uniformity of photoresist coating, etc., to achieve Reduce the amount of photoresist, improve the thickness uniformity, and reduce the cost

Inactive Publication Date: 2018-07-31
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, a large amount of photoresist is required when coating photoresist, and the uniformity of photoresist coating is poor, which affects the quality of integrated circuits

Method used

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  • Photoresist coating process, wetting solvent screening method and wetting solvent
  • Photoresist coating process, wetting solvent screening method and wetting solvent
  • Photoresist coating process, wetting solvent screening method and wetting solvent

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] This embodiment provides a process technology for photoresist coating, such as figure 1 As shown, the process includes:

[0060] Step S11: providing a wafer to be coated;

[0061] Step S12: Titrating a wetting solvent on the surface of the wafer to be coated, and spin coating the wetting solvent for pre-wetting to form a wetting layer;

[0062] Step S13: Spin-coat photoresist on the surface of the wetting layer to form a photoresist layer.

[0063] which, combined with figure 2 As shown, the contact angle between the wetting solvent droplet 110 formed on the surface to be coated of the wafer 120 and the surface to be coated of the wafer 120 by titration of the wetting solvent is θ, and the contact angle θ is measured, and the The contact angle between the wetting solvent droplet 110 formed on the surface to be coated and the surface to be coated of the wafer 120 by wetting solvent titration is less than 90°, that is, θ1 / 2 , the polarity parameter is between 4.1~16.7...

Embodiment 2

[0081] This embodiment provides a screening method of wetting solvents for coating and wetting the wafer before coating photoresist, such as image 3 As shown in the flow chart, including:

[0082] Step S21: Select m kinds of solvents to coat m groups of wafers, and coat a group of wafers with one solvent to form a wetting layer, wherein each group of wafers includes n wafers, and m and n are equal to is a positive integer greater than or equal to 2;

[0083] Step S22: For each group of wafers, apply n kinds of preset amounts of the first photoresist on the wetting layers of n wafers respectively to form a photoresist layer to form a glue-coated sheet, wherein , in each group of wafers, a wafer is coated with a preset amount of the first photoresist to form a coated film;

[0084] Step S23: Screening the coated sheets according to the screening conditions, and filtering out a set of coated sheets satisfying the screening conditions;

[0085] Step S24: Screen the set of coat...

Embodiment 3

[0120] This embodiment provides a use of a solvent including cyclohexanone and / or cyclohexanone derivatives for coating and wetting a wafer before coating a photoresist.

[0121] In this embodiment, the solvent comprising cyclohexanone and / or cyclohexanone derivatives is used as a wetting solvent for coating and wetting the wafer before coating the photoresist, so that the photoresist is coated with The wetting solvent is evenly mixed on the contact surface, which improves the uniformity of photoresist coating, and further improves the uniformity of the thickness of the photoresist layer formed by the photoresist.

[0122] Regarding the use of solvents including cyclohexanone and / or cyclohexanone derivatives as coating wetting of wafers prior to coating of photoresist, the applicable range includes ArF dry photolithography and ArF immersion In the photolithography method, the wafer is wetted before coating; wherein, the ArF dry photolithography method is a method of dry photol...

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PUM

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Abstract

The invention provides a photoresist coating process, a wetting solvent screening method and a wetting solvent. The photoresist coating process comprises the steps of providing one wafer; titrating awetting solvent on a to-be-coated surface, carrying out spin-coating of the wetting solvent for premixing to form one wetting layer; and carrying out spin-coating of one photoresist on the surface ofthe wetting layer to form one photoresist layer; and the screening method comprises the steps of coating m groups of wafers with m solvents, forming the wetting layers through coating one group of wafers with one solvent; coating the wetting layers of n wafers in each group with n preset amount of photoresists and forming the photoresist layers to form coated films; and screening the coated filmsaccording to screening conditions and taking the solvent coating the coated film which meets the screening conditions and of which the preset amount of the photoresist is the minimum as the wetting solvent. The solvent comprising cyclohexanone and / or cyclohexanone derivatives is adopted as the wetting solvent before coating of one photoresist, so that the coating effect of each photoresist can beimproved, and the amount of each photoresist for coating is reduced.

Description

technical field [0001] The invention relates to photoresist coating in integrated circuit yellow light manufacturing process, in particular to a photoresist coating process technology, a wetting solvent screening method and a wetting solvent. Background technique [0002] With the improvement of the quality requirements of integrated circuits, in the photoresist coating of the yellow light process with a wafer size of 8 inches and above, it is necessary to maintain the uniformity of the thickness of the photoresist layer formed by the photoresist and reduce the photoresist during the coating process. The amount of resist used is particularly important. Usually, a large amount of photoresist needs to be used when coating the photoresist, and the coating uniformity of the photoresist is poor, thereby affecting the quality of the integrated circuit. Contents of the invention [0003] The invention provides a photoresist coating process, a wetting solvent screening method and...

Claims

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Application Information

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IPC IPC(8): G03F7/16H01L21/027
CPCG03F7/16H01L21/0273
Inventor 黄帅吴明锋
Owner CHANGXIN MEMORY TECH INC
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