A kind of power module and its manufacturing method
A technology of power module and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve the problem of large module size, save production cost, facilitate miniaturization, and reduce volume Effect
Active Publication Date: 2019-10-08
BYD SEMICON CO LTD
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Problems solved by technology
[0004] The purpose of the present invention is to provide a power module and its manufacturing method, which aims to solve the problem that the traditional power semiconductor module needs to be molded, and contains an electrical adapter block that plays a supporting role, and the module is relatively large.
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[0026] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0027] see figure 1 , the power module in the preferred embodiment of the present invention includes an insulating dielectric substrate 10 , at least one power semiconductor chip 20 , a second insulating layer 40 and a second conductive layer 50 .
[0028] The insulating dielectric substrate 10 has upper and lower surfaces opposite to each other, at least one of which is covered with metal, and the middle layer is an insulating dielectric layer (first insulating layer) 11 . In this embodiment, the lower surface of the insulating dielectric substrate 10 is covered ...
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The present invention provides a power module and a manufacturing method thereof. The power module includes: an insulating dielectric substrate, including a first conductive layer and a first insulating layer disposed on the first conductive layer, and the first insulating layer is provided There are a first conductive path; a second insulating layer, the second insulating layer is provided with a second conductive path; a patterned second conductive layer; at least one power semiconductor chip, embedded in the first insulating layer and the second Between insulating layers; wherein, the power semiconductor chip is electrically connected to the first conductive layer through the first conductive path, and is electrically connected to the second conductive layer through the second conductive path. The packaging does not need to open the plastic sealing mold, which saves production costs; in addition, the power semiconductor chip realizes electrical connection with the upper conductive layer by opening a through hole on the insulating layer and filling the conductive material, which reduces the volume of the module and is conducive to the miniaturization of the module.
Description
technical field [0001] The invention relates to the field of hybrid integrated circuits, in particular to a power module and a manufacturing method thereof. Background technique [0002] A power semiconductor module is a device in which multiple semiconductor chips are packaged together according to a certain circuit structure. In an IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) module, the IGBT chip and the diode chip are integrated into a common base plate, and the power device of the module is insulated from its mounting surface (ie, heat sink). [0003] Traditional power semiconductor modules require mold opening for plastic molding, which is costly. In addition, power semiconductor modules include electrical transfer blocks that play a supporting role, and the modules are large in size and low in integration. Contents of the invention [0004] The purpose of the present invention is to provide a power module and its manufacturing method,...
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IPC IPC(8): H01L23/498H01L21/60
CPCH01L23/498H01L24/19H01L24/24H01L2224/19H01L2224/24227H01L23/31H01L23/522H01L23/538H01L2224/18H01L2224/2518
Inventor 李慧杨胜松廖雯祺杨钦耀李艳张建利曾秋莲
Owner BYD SEMICON CO LTD