Split-gate power DMOS device
A shielding gate and power technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of increasing the threshold voltage of power DMOS devices, unable to prevent the parasitic BJT from being turned on, and unable to infinitely reduce the resistance of the parasitic BJT base area, so as to improve the resistance UIS invalidation ability, UIS tolerance improvement, effect of preventing opening
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Embodiment 1
[0026] A shielded gate power DMOS device, the cross-sectional schematic diagram of its cell structure is as follows figure 2As shown, it includes: a metallized drain 1, a first conductivity type semiconductor substrate 2, a first conductivity type semiconductor drift region 3 and a metallization source 12 stacked in sequence from bottom to top, the first conductivity type semiconductor There are trench gate structures on both sides of the top layer of the drift region 3, and the trench gate structure includes a shield gate electrode 9 disposed at the bottom of the trench 7, a control gate electrode 8 disposed at the top of the trench 7, and a shield gate electrode 8 disposed on the control gate electrode 8. and the dielectric layer 10 around the shielding gate electrode 9, and the control gate electrode 8 and the shielding gate electrode 9 are separated by the dielectric layer 10; there are second trench gate structures between the top layer of the first conductivity type semi...
Embodiment 2
[0028] A shielded gate power DMOS device, the three-dimensional schematic diagram of its cell structure is as follows image 3 as shown, Figure 4 and Figure 5 The cross-sectional schematic diagrams obtained along the line AA' and BB' of the cell structure respectively include: a metallized drain 1 stacked in sequence from bottom to top, a first conductivity type semiconductor substrate 2, a first conductivity type Semiconductor drift region 3 and metallized source 12, both sides of the top layer of the first conductivity type semiconductor drift region 3 have a trench gate structure, and the trench gate structure includes a shielding gate electrode 9 and a device at the bottom of the trench 7 The control gate electrode 8 on the top of the trench 7 and the dielectric layer 10 arranged around the control gate electrode 8 and the shielding gate electrode 9, the control gate electrode 8 and the shielding gate electrode 9 are all along the image 3 The shown x-axis direction ex...
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