Silicon carbide mosfet device and manufacturing method thereof
A silicon carbide and device technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as device or ion implanter pollution, device thermal burnout, current amplification, etc., to improve the ability to resist UIS failure, Suppress the effect of opening
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[0043] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0044]A silicon carbide MOSFET device, comprising a drain metal 7, an N+ substrate 6 above the drain metal 7, and an N-drift region 5 above the N+ substrate 6; a recess is provided in the middle of the N-drift region 5 Groove 11, the first P-type base region 8 is on the left side of the groove 11, and the second P-type base region 81 is on the right side; a first N+ source region 9 is provided above the first P-type base region 8; The...
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