Nozzles for Substrate Analysis
A nozzle and substrate technology, which is used in the preparation of test samples, semiconductor/solid-state device testing/measurement, electrical components, etc., can solve the problems of gradual leakage of analytical liquid, leakage of analytical liquid D, and complicated device structure, so as to prevent falling off. , the effect of preventing leakage
Active Publication Date: 2020-02-14
IAS LIMITED
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Problems solved by technology
[0011] However, even with the nozzle described in Patent Document 1, when the hydrophilicity of the substrate surface is high, once the tip portion of the nozzle is relatively moved (scanned) relative to the substrate surface to analyze the substrate surface, there will be The analysis liquid tends to gradually leak out on the opposite side of the moving direction (scanning direction) of the nozzle
Specifically, when analyzing the surface of a substrate with high hydrophilicity, the phenomenon that the analysis liquid D leaks from the tip of the nozzle tends to occur on the opposite side of the scanning direction.
[0012] In addition, in the substrate processing apparatus of Patent Document 2, although liquid droplets can be held reliably, if the pressure of the gas ejected from the opening is too strong, the area where the held liquid droplets contact the substrate will be reduced, so strict handling is required. pressure adjustment
Therefore, there is a tendency that the device structure becomes complicated
In addition, it tends to be difficult to strictly control the pressure of the gas ejected from the opening
Method used
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Embodiment 1
[0043] Example 1 is to use the figure 2 The substrate analysis of the gas spray tube shown is performed with the nozzle. Nitrogen was used as an inert gas, and the injection rate was 2.0 L / min. Next, under the same conditions as in Comparative Example 2 above, the space between the nozzle body 10 and the outer tube 20 was made into a depressurized environment by the suction device 21 . As a result, in the case of Example 1, even when the scanning speed of the nozzle was set to 10 mm / sec, no leakage of the analysis liquid from the tip of the nozzle was confirmed. Furthermore, in the nozzle scanning operation, the analysis liquid does not remain on the substrate surface, and the entire substrate surface can be scanned by the nozzle.
[0044] According to the above analysis results, as long as the inert gas is sprayed on the outer peripheral side of the outer tube by using the gas spraying tube, the scanning operation of the nozzle can be accelerated by as much as five times ...
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The present invention provides a nozzle for substrate analysis, which is a nozzle for substrate analysis that can reliably analyze a substrate having a relatively hydrophilic characteristic without leaking the analysis liquid even if it is scanned with an analysis liquid . The nozzle for substrate analysis of the present invention is composed of a double-layer tube, and is provided with an exhaust device that uses the space between the nozzle main body and the outer tube as an exhaust path. It is composed of an outer tube disposed on the periphery of the nozzle body in such a way as to surround the analysis liquid to be scanned. The nozzle for substrate analysis is located on the outer peripheral side of the front end of the outer tube and on the opposite side of the scanning direction of the nozzle, and is arranged toward the front end of the nozzle body. A gas spray tube that sprays an inert gas in a direction approximately parallel to the substrate surface.
Description
technical field [0001] The present invention relates to a nozzle for analyzing analyte objects such as trace metals contained in a substrate. Background technique [0002] Nozzles used for analysis of substrates such as semiconductor wafers are used to detect metals, organic substances, etc. that have been mixed into the substrate during the process, etc., using a small amount of analysis liquid. Specifically, it is used when analyzing a substrate on which a silicon dioxide film or a silicon nitride film is formed on a substrate such as a silicon wafer, before etching the formed film by a vapor phase decomposition method or the like. In the processing, the impurities in the formed film are left on the substrate surface in the form of residue, and then a small amount of analysis liquid is discharged, and the substrate surface is scanned with the discharged analysis liquid to recover impurities. On a hydrophobic substrate, since the analysis liquid is easily maintained in a d...
Claims
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IPC IPC(8): G01N1/28G01N1/32
CPCG01N1/28G01N1/32H01L21/6708H01L21/67253G01N1/14H01L21/67242H01L22/30H01L21/67288H01L22/10
Inventor 川端克彦李晟在一之濑达也
Owner IAS LIMITED