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Sensing layer formation

A structure and gas technology, applied in the field of selective area heating, can solve the problems of not knowing the advantages of selective area heating, etc., and achieve the effect of improving performance and manufacturing output, high output, and simple output

Active Publication Date: 2018-08-03
XIAO TESTING CO LTD
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Problems solved by technology

[0010] Conventional rapid thermal processing (RTP) has been used to fire ceramic membranes, but the benefits of selective zone heating are not known due to the process and structure used

Method used

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specific Embodiment approach

[0074] figure 2 A schematic cross-section of the IR heating process applied on multiple micro-hotplates is shown. All of multiple micro-hotplates can be located on a single chip or wafer. IR heating is applied to the gas sensing material, metal oxide 5, on the electrodes. In this example, the IR heating process involves the use of an array of infrared heaters 1 and a cooled substrate (or cooling structure) 3 . The substrate 4 is heated by infrared radiation 2 from the infrared heater 1 . In this particular embodiment, for example, the substrate 4 is represented by a silicon wafer with etched cavities 6 to form a membrane 7 on which a metal oxide (or sensing structure) 5 is deposited. The substrate 4 is separated from the cooled chuck or cooling plate by a support structure 8 to form a thermal isolation zone 9 . The gap 9 can be filled with air or a combination of one or more gases. The pressure can be adjusted to change the thermal coupling between the wafer and cooling ...

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Abstract

We disclose herein a method for heating a gas sensing material formulation on a microhotplate which comprises: a dielectric membrane formed on a semiconductor substrate comprising an etched portion; and the gas sensing material formulation being located on one side of the dielectric membrane. The method comprising: selectively heating the gas sensing material formulation using an infra-red (IR) heater located over the substrate, and controllably cooling the semiconductor substrate using a cooling baseplate provided under the substrate and using an insulating medium located between the substrate and the cooling base plate so that a gas sensing structure is formed on said one side of the dielectric membrane from the gas sensing material formulation.

Description

technical field [0001] The present invention relates to a selective area heating of a film-based sensor using infrared (IR) heating by controlled cooling techniques. Background technique [0002] Metal oxide (MOX) gas sensors are a well-established technology and are based on the deposition of metal oxide films onto sensing electrodes defined on or within a suitable substrate. The substrate can be ceramic or the newer silicon substrate. The deposition process may use thin film techniques such as sputtering, atomic layer deposition or chemical vapor deposition, or thick film techniques such as screen printing, drop coating or inkjet. In the latter case, the films can be deposited in the form of inks or pastes in which the metal oxide particles are held in suspension in a suitable carrier, usually comprising an organic solvent. Such supports generally require that the powder be removed and any organic compounds decompose, leaving uncontaminated metal oxides. Furthermore, me...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/128H01L21/67115G01N27/4075H01L21/67103
Inventor S·J·斯黛茜M·高维特S·Z·艾利
Owner XIAO TESTING CO LTD
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