Laser annealing device and annealing method thereof

Abstract

The invention provides a laser annealing device and an annealing method thereof. The laser annealing device comprises a sheet carrying table and a laser light source system mainly formed by a preheating laser light source system and an annealing optical system, a laser adjustment system, a measurement system, a sheet carrying table moving system and a central control system. By adopting the laserannealing device and the annealing method thereof, adjustability of an incident angle between an incident beam and the surface of a workpiece to be annealed within a certain range and movement of a light spot position can be realized; by compensating adjustment of the laser adjustment system through adjustment of the sheet carrying table, the annealing surface of the workpiece to be annealed needsto always keep the incident beam in a public focal plane, and the consistence of annealing energy is ensured; a measurement result of the measurement system can be controlled by the central control system to be fed back to adjustment of the sheet carrying table moving system or the laser adjustment system, so that work in the annealing process is in an optimal state; and in addition, by arranginga workpiece protective ring on the sheet carrying table, the sheet carrying table can be effectively avoided from being damaged by an annealing laser beam, and a maximum annealing area can also be acquired.

Description

technical field [0001] The invention relates to the field of laser annealing, in particular to a laser annealing device and an annealing method thereof. Background technique [0002] Driven by Moore's Law, the chip manufacturing industry has experienced rapid development in the past few decades. This continued rapid development stems from the continued shrinking of chip sizes. Correspondingly, this smaller size poses increasingly higher difficulties and challenges to the chip manufacturing process. The traditional rapid thermal annealing method for silicon wafers has been difficult to meet the requirements of 14nm and higher nodes. New alternative annealing techniques are being intensively investigated. [0003] Due to the development of laser application technology in recent years, laser annealing technology has shown good application prospects. Compared with traditional annealing, laser annealing has a small thermal budget and high activation efficiency, which can grea...

AI Technical Summary

Problems solved by technology

[0007] However, the existing laser annealing technology only uses a laser with one wavelength for annealing, which causes a patterning effect on the silicon wafer, and when the step size of the annealing spot is increased, the surface of the silicon wafer is prone to exceed the focal plane of the spot, which seriously affects the Uniform annealing temperature greatly reduces the photolithographic effect and stability of silicon wafers

In addition, with the improvement of the integration of semiconductor devices, it is required that the chip distribution on the silicon wafer occupies as large an area as possible, and finally the chip is very close to the edge of the silicon wafer, while the annealing spot of the existing laser annealing scans the edge of the silicon wafer. , it will irradiate the workpiece table, causing damage to the parts of the workpiece table

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