Inflection point-based HDR image sensor pixel structure and imaging system

An image sensor and pixel structure technology, applied in the field of image sensors, can solve the problem that the pixel structure cannot support multiple exposure modes, and achieve high dynamic range characteristics and prevent overexposure.

Active Publication Date: 2018-08-17
思特威(上海)电子科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide an inflection point based HDR image sensor pixel structure and imaging system to solve the problem that the existing pixel structure cannot support multiple exposure modes

Method used

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  • Inflection point-based HDR image sensor pixel structure and imaging system
  • Inflection point-based HDR image sensor pixel structure and imaging system
  • Inflection point-based HDR image sensor pixel structure and imaging system

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Experimental program
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Embodiment 1

[0062] see figure 1 ,Such as figure 1 As shown, the inflection point-based HDR image sensor pixel structure provided by the embodiment of the present invention includes a photodiode pd for accumulating charges generated by the photoelectric effect in response to incident light, the photodiode has a first terminal and a second terminal, the first terminal connected to the ground terminal, and the second terminal is respectively coupled to the floating diffusion node FD through two branches, one of which is a rolling exposure transfer unit, and the other branch is a global exposure transfer unit; in this embodiment, the rolling exposure The transmission unit is a rolling exposure transmission transistor RTX, and the second terminal of the photodiode pd is coupled to the floating diffusion node FD through the rolling exposure transmission transistor RTX. The global exposure transfer unit includes a global exposure transfer transistor GTX, an exposure control transistor SSG and a...

Embodiment 2

[0111] see Figure 5 ,Such as Figure 5 As shown, compared with Embodiment 1, in the inflection point-based HDR image sensor pixel structure provided by the embodiment of the present invention, the storage capacitor Cm is a parasitic capacitance, specifically, the storage capacitor Cm is the parasitic capacitance of the exposure control transistor SSG to ground. Apart from this, other aspects of this embodiment are the same as those of Embodiment 1, and will not be repeated here.

Embodiment 3

[0113] see Figure 6 ,Such as Figure 6 As shown, this embodiment provides an imaging system 100, including a pixel array 110, the pixel array 110 is arranged in rows and columns, and the structure of each pixel in the pixel array 110 can be the embodiment 1 to embodiment 2 For any one of the pixel structures, please refer to Embodiment 1 to Embodiment 2 for details of the pixel structure, which will not be repeated here.

[0114] In addition, as an exemplary embodiment, the imaging system further includes a logic control unit 120, a drive unit, a column A / D conversion unit 150, and an image processing unit 160; wherein:

[0115] The logic control unit 120 is used to control the working sequence logic of the whole system;

[0116] One end of the drive unit is connected to the logic control unit 120, and the other end is coupled to the pixel array 110 for driving and controlling each control signal line in the pixel array 110; specifically, the drive unit includes a row drive...

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Abstract

The invention discloses an inflection point-based HDR image sensor pixel structure and an imaging system. A reset transistor of the pixel structure is coupled between a floating diffusion node and a first voltage source, a photodiode of the pixel structure is coupled to the floating diffusion node through a rolling exposure transmission unit and a global exposure transmission unit separately, andthe rolling exposure transmission unit can be used for providing a balance current in exposure of the photodiode so as to control full well electric charge amount. Two exposure modes of transmission unit are used to transfer electric charge, so that the pixel structure can support multiple exposure modes; the rolling exposure transmission unit can be used for providing a balance current in exposure of the photodiode so as to control full well electric charge, so that the signal transmission gain is changed, and the pixel structure has a characteristic of high dynamic range.

Description

technical field [0001] The invention relates to the technical field of image sensors, in particular to an inflection point-based HDR image sensor pixel structure and an imaging system. Background technique [0002] In recent years, the CMOS image sensor industry has developed rapidly, and the chip area of ​​the image sensor has become smaller and smaller. With the reduction of the pixel size, it is necessary for the image sensor to perform in a wide range of lighting conditions (from low light conditions to bright light conditions). requirements become more difficult to achieve. This performance capability is often referred to as having high dynamic range imaging (HDR). In conventional image capture devices, a pixel unit requires multiple sequential exposures to achieve HDR. [0003] In order to improve the dynamic range of the image sensor, various new pixel unit structures have been proposed. However, the existing pixel unit structures generally only support a single exp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/374H04N5/378H04N5/369H04N5/355
CPCH04N25/57H04N25/70H04N25/76H04N25/75
Inventor 莫要武徐辰张正民任冠京高哲谢晓邵泽旭马伟剑石文杰
Owner 思特威(上海)电子科技股份有限公司
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