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Semiconductor component and manufacturing method thereof

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as large size and limited design flexibility

Inactive Publication Date: 2018-09-07
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to withstand a voltage of up to hundreds of volts, the size of the high-voltage junction field effect transistor is relatively large, which limits the design flexibility of the saturation current (saturation current) of the high-voltage junction field effect transistor.

Method used

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  • Semiconductor component and manufacturing method thereof
  • Semiconductor component and manufacturing method thereof
  • Semiconductor component and manufacturing method thereof

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Experimental program
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Embodiment Construction

[0061] In the following embodiments, when the first conductivity type is N type, the second conductivity type is P type; when the first conductivity type is P type, the second conductivity type is N type. The P-type dopant is, for example, boron; the N-type dopant, for example, is phosphorus or arsenic. In this embodiment, the first conductivity type is P-type and the second conductivity type is N-type as an example for illustration, but the present invention is not limited thereto. In addition, the same or similar element symbols represent the same or similar elements.

[0062] figure 1 It is a schematic top view of a semiconductor device according to an embodiment of the present invention.

[0063] Please refer to figure 1 , the present embodiment provides a semiconductor element 100, including: a substrate 102 with a first conductivity type, a first well region 104 with a second conductivity type, a first doped region 108 with a first conductivity type, and a second well...

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Abstract

A semiconductor component comprises a substrate of a first conducting type, a first well region of a second conducting type, a first doping region of the first conducting type, a second well region ofthe second conducting type, at least one second doping region of the first conducing type, at least one third doping region of the second conducting type and a fourth doping region of the second conducting type. The first well region is positioned in the substrate. The first doping region is positioned in the first well region. The second well region is positioned in the first well region and between the first doping region and the substrate. The second doping region is positioned in the first doping region. The third doping region is positioned in the first well region in the first side of the first doping region. The fourth doping region is positioned in the first well region at the second side of the first doping region.

Description

technical field [0001] The present invention relates to an integrated circuit and its manufacturing method, and in particular to a semiconductor element and its manufacturing method. Background technique [0002] High-voltage semiconductor components are widely used in fields such as high-voltage AC-DC converters (AC-DC converters) and LED drivers. With the rising awareness of environmental protection, high voltage semiconductor devices with high conversion efficiency and low standby power consumption are getting more and more attention. Therefore, a high-voltage start-up circuit (HVstart-up circuit) and a pulse width modulation (Pulse Width Modulation, PWM) circuit are usually integrated into a single chip to achieve energy-saving effects. [0003] In the prior art, a power resistor is often used as a high voltage startup circuit. However, power resistors continue to consume energy after starting the pulse width circuit, which increases energy consumption and is not suita...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/808H01L21/337
CPCH01L29/0619H01L29/0623H01L29/66893H01L29/808
Inventor 蔡英杰
Owner MACRONIX INT CO LTD