Oxidation passivation method and terminal device for solar cell silicon wafer

A technology of solar cells and silicon wafers, applied in the field of solar cells, can solve the problems of low yield rate of solar cells and achieve the effect of solving low yield rate and improving yield rate

Active Publication Date: 2018-09-11
YINGLI ENERGY CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of this, an embodiment of the present invention provides an oxidation passivation method and terminal equipment for silicon wafers of solar cells to solve the problem of low yield of solar cells in the prior art

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  • Oxidation passivation method and terminal device for solar cell silicon wafer
  • Oxidation passivation method and terminal device for solar cell silicon wafer
  • Oxidation passivation method and terminal device for solar cell silicon wafer

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Embodiment 1

[0044] In the embodiment of the present invention, the oxidation passivation method for silicon wafers of solar cells is applied in the production line of solar cells.

[0045] Please refer to figure 1 , the oxidation passivation method of solar cell silicon wafer comprises the steps:

[0046] Step S101 , performing oxidation passivation treatment on the surface of a first preset number of silicon wafers of solar cells through an oxidation passivation process.

[0047] In the embodiment of the present invention, the silicon wafers used to produce solar cells are subjected to the process steps of texturing and polishing the back field, preparation of the front emitter, back etching, ion implantation, cleaning and annealing, and before the oxidation passivation process, A first preset number of solar cell silicon wafers and a second preset number of solar cell silicon wafers are respectively selected among the solar cell silicon wafers. In an implementation manner, a first pre...

Embodiment 2

[0068] Please refer to figure 2 , Embodiment 2 of the present invention provides an oxidation passivation device for silicon wafers of solar cells, comprising:

[0069] The first processing module 201 is used to perform oxidation passivation treatment on the surface of a first preset number of solar cell silicon wafers through an oxidation passivation process;

[0070] A first acquisition module 202, configured to acquire a first theoretical voltage value of the first preset number of silicon wafers of solar cells after oxidation passivation treatment;

[0071] The second acquisition module 203 is configured to acquire a second theoretical voltage value of a second preset number of silicon wafers of solar cells;

[0072] A judging module 204, configured to judge whether the oxidation passivation process is qualified according to the first theoretical voltage value and the second theoretical voltage value;

[0073] The second processing module 205 is configured to remove the...

Embodiment 3

[0088] image 3 It is a schematic diagram of oxidation passivation terminal equipment for silicon wafers of solar cells provided by an embodiment of the present invention. Such as image 3As shown, the terminal device 3 for oxidation passivation of solar cell silicon wafers in this embodiment includes: a processor 301 , a memory 302 , and a computer program 303 stored in the memory 302 and operable on the processor 301 . When the processor 301 executes the computer program 303, it realizes the steps in the above embodiments of the oxidation passivation method for silicon wafers of solar cells, for example figure 1 Steps S101 to S105 are shown. Alternatively, when the processor 301 executes the computer program 303, it realizes the functions of the modules / units in the above-mentioned device embodiments, for example figure 2 The functions of modules 201 to 205 are shown.

[0089] Exemplarily, the computer program 303 may be divided into one or more modules / units, and the o...

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Abstract

The invention is applicable to the field of solar cell technology, and provides an oxidation passivation method and terminal device for a solar cell silicon wafer. The method comprises steps of: performing oxidation passivation treatment on the surfaces of a first preset number of solar cell silicon wafers through the oxidation passivation process; acquiring a first theoretical voltage value of the first preset number of solar cell silicon wafers after the oxidation passivation treatment; acquiring a second theoretical voltage value of a second preset number of solar cell silicon wafers; according to the first theoretical voltage value and the second theoretical voltage value, determining whether the oxidation passivation process is qualified; and when the oxidation passivation process isqualified, performing oxidation passivation treatment on the surfaces of solar cell silicon wafers expect the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers. The method can improve the yield of solar cells.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to an oxidation passivation method and terminal equipment for silicon wafers of solar cells. Background technique [0002] A solar cell is a semiconductor device that converts solar energy into electricity. The yield rate of solar cells refers to the ratio of the number of good solar cells prepared on the solar cell production line to the theoretical output of input materials. Yield rate is an important indicator to measure the pros and cons of solar cell production lines. The oxidation passivation process is an important process step in the production of solar cells. The traditional oxidation passivation method is to directly perform oxidation passivation treatment on the silicon wafers on the solar cell production line, which often leads to low yield of solar cells. Contents of the invention [0003] In view of this, embodiments of the present invention provid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/0216H01L31/18Y02P70/50
Inventor 郞芳王英超王红芳刘杰徐卓张伟王平张磊李锋史金超
Owner YINGLI ENERGY CHINA
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