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Nb oxide based gating device and preparation method thereof

A technology for gating devices and oxides, applied in electrical components and other directions, and can solve problems such as poor stability

Active Publication Date: 2018-09-14
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the threshold switch gating tube in the prior art has poor stability and cannot meet market demand.

Method used

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  • Nb oxide based gating device and preparation method thereof
  • Nb oxide based gating device and preparation method thereof
  • Nb oxide based gating device and preparation method thereof

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Experimental program
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preparation example Construction

[0031] The present invention also provides a method for preparing a gate device based on niobium oxide described in the above technical solution, comprising the following steps:

[0032] (1) Using argon as the working gas and using the niobium pentoxide target as the sputtering target, the first sputtering is performed on the surface of the bottom electrode to obtain a semi-finished gate device based on niobium oxide;

[0033] (2) Argon is used as the working gas, and the platinum target is used as the sputtering target, and the second sputtering is carried out on the surface of the niobium oxide of the gate device semi-finished product based on the oxide of niobium to obtain the oxide based on niobium. gating device.

[0034] In the present invention, a platinum target and a niobium pentoxide target are preferably installed on the magnetron sputtering equipment, and then after the vacuum chamber of the magnetron sputtering equipment is evacuated, argon gas is introduced to th...

Embodiment 1

[0051] (1) will have an area of ​​1μm 2 The surface of the mold-loading base material of the TiN bottom electrode is washed by high-pressure air, and it is used for standby; the TiN bottom electrode is square and has a thickness of 200nm;

[0052] (2) Install a platinum target and a niobium pentoxide target in the magnetron sputtering equipment, place the mold carrier substrate with the TiN bottom electrode obtained in step (1) in the magnetron sputtering equipment, and place the vacuum chamber After evacuating, argon is introduced until the system pressure is 4 Torr;

[0053] (3) Turn on the radio frequency measurement and control sputtering power supply, and at a temperature of 300K, with a power of 120W, sputter niobium pentoxide to the surface of the TiN bottom electrode for 800s, then turn off the radio frequency magnetron sputtering to obtain a semi-finished product;

[0054] (4) Turn on the DC magnetron sputtering power supply, and at a temperature of 300K, with a powe...

Embodiment 2

[0059] (1) will have an area of ​​0.36μm 2 The surface of the mold-loading base material of the TiN bottom electrode is washed by high-pressure air, and it is used for standby; the TiN bottom electrode is square and has a thickness of 200nm;

[0060] (2) Install a platinum target and a niobium pentoxide target in the magnetron sputtering equipment, place the mold carrier substrate with the TiN bottom electrode obtained in step (1) in the magnetron sputtering equipment, and place the vacuum chamber After evacuating, argon is introduced until the system pressure is 4 Torr;

[0061] (3) Turn on the radio frequency measurement and control sputtering power supply, and at a temperature of 300K, with a power of 120W, sputter niobium pentoxide to the surface of the TiN bottom electrode for 800s, then turn off the radio frequency magnetron sputtering to obtain a semi-finished product;

[0062] (4) Turn on the DC magnetron sputtering power supply, and at a temperature of 300K, with a p...

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Abstract

The invention provides an Nb oxide based gating device. The device comprises a bottom electrode, a conversion layer and a top electrode from bottom to top sequentially, wherein the bottom electrode isTiN or conductive glass; the conversion layer is Nb oxide; the top electrode is Pt. Nb oxide as the conversion layer, TiN or the conductive glass as the bottom electrode and Pt as the top electrode constitute the Nb oxide based gating device with excellent electrical stability. Experimental results prove that the deviation degree of an obtained curve is small when the gating device is tested circularly for 100 cycles, which proves that the gating device has excellent electrical stability.

Description

technical field [0001] The invention relates to the technical field of electronic materials and components, in particular to a gate device based on niobium oxide and a preparation method thereof. Background technique [0002] With the advent of the cloud era, big data (Big data) has also attracted more and more attention, and the corresponding big data requires massive storage space. As a strong competitor of the next-generation non-volatile memory devices, high-density cross-matrix memory has broad market prospects. However, one of the main disadvantages of this structure is that leakage current through adjacent memory cells can cause sneak path problems. These leakage currents can cause insignificant memory addressing and reading errors. The sneak path problem also increases power consumption and limits the size of the crossbar array, which can severely impact memory performance. [0003] The gating device has high nonlinear value and on-state current density, reduces l...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/026H10N70/8833
Inventor 王浩陈傲马国坤何玉立陈钦
Owner HUBEI UNIV
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