Microwave plasma chemical vapor deposition (MPCVD) synthesis device, control method and synthesis method

Abstract

The invention relates to a microwave plasma chemical vapor deposition (MPCVD) synthesis device, a control method and a synthesis method. The synthesis device comprises a microwave generating device, areaction cavity and a gas supply device. The synthesis device is characterized in that the synthesis device further comprises a microwave reflecting measuring device, a temperature measuring device,a vacuum measuring device, an atmospheric pressure control device and a control center, wherein the microwave generating device, the microwave reflecting measuring device, the temperature measuring device, the vacuum measuring device, the atmospheric pressure control device and the gas supply device are separately connected with the control center in a communication mode. According to the microwave plasma chemical vapor deposition (MPCVD) synthesis device, the control method and the synthesis method, by automatic matching of power, atmospheric pressure, temperature and reflecting microwave, dynamic balance is realized, the internal environment of the reaction cavity can be stabilized in the environment which is most suitable for the synthesis of a target product, and the synthesis rate andquality of the target product can be improved; through the automatic matching of the power, atmospheric pressure, temperature, and reflecting microwave, the operating efficiency of the operator is effectively improved, and the time and labor is achieved; and the use efficiency of a magnetron is effectively improved, and the use safety is ensured.

Description

technical field [0001] The invention relates to a microwave plasma chemical vapor deposition (MPCVD) synthesis equipment, a control method and a synthesis method, and belongs to the field of chemical vapor deposition equipment. Background technique [0002] The MPCVD method can not only be used to synthesize diamond, but is also applicable to the preparation of many other materials. The quality of MPCVD synthesized diamond is related to many factors, including carbon source concentration, gas flow rate, substrate stage height, microwave power, synthesis temperature, etc. The synthesis temperature has a great relationship with the quality of the synthetic diamond, so the automatic monitoring and control of the diamond temperature during the synthesis process is very critical. In the prior art, manual adjustment is generally used to adjust various factors and control the synthesis reaction to proceed stably. However, manual adjustment may cause misoperation, and at the same ti...

AI Technical Summary

Problems solved by technology

In order to improve the deposition rate, quality and appropriately large deposition area of ​​the diamond film, many developed countries are currently developing high-power MPCVD technology and have developed a variety of high-power MPCVD equipment, but the magnetic field in the microwave generator in the high-power MPCVD equipment The control components are very fragile, and the magnetron may be damaged due to excessively high reflected microwave power during the diamond synthesis process, especially during the microwave power up and down process before and after the reaction

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