Microwave plasma chemical vapor deposition (MPCVD) synthesis device, control method and synthesis method

A technology of synthesis equipment and control method, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as fragility and damage to magnetrons, improve speed and quality, ensure use safety, improve The effect of using efficiency

Inactive Publication Date: 2018-09-18
CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
View PDF6 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to improve the deposition rate, quality and appropriately large deposition area of ​​the diamond film, many developed countries are currently developing high-power MPCVD technology and have developed a variety of high-power MPCVD equipment, but the magnetic field in the microwave...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microwave plasma chemical vapor deposition (MPCVD) synthesis device, control method and synthesis method
  • Microwave plasma chemical vapor deposition (MPCVD) synthesis device, control method and synthesis method
  • Microwave plasma chemical vapor deposition (MPCVD) synthesis device, control method and synthesis method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0053] The present invention will be described in detail below with reference to the accompanying drawings and examples. It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. For the convenience of description, if the words "up", "down", "left" and "right" appear in the following, it only means that the directions of up, down, left and right are consistent with the drawings themselves, and do not limit the structure.

[0054] Such as figure 2 As shown, a kind of MPCVD synthesis equipment includes a microwave generating device 1, a microwave transmission system (including a microwave transmission waveguide, a three-pin, a mode converter, and a short-circuit piston) connected to the microwave output port of the microwave generating device, and a microwave transmission system connected to the microwave generating device 1. The connected reaction chamber 2 and the gas sup...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a microwave plasma chemical vapor deposition (MPCVD) synthesis device, a control method and a synthesis method. The synthesis device comprises a microwave generating device, areaction cavity and a gas supply device. The synthesis device is characterized in that the synthesis device further comprises a microwave reflecting measuring device, a temperature measuring device,a vacuum measuring device, an atmospheric pressure control device and a control center, wherein the microwave generating device, the microwave reflecting measuring device, the temperature measuring device, the vacuum measuring device, the atmospheric pressure control device and the gas supply device are separately connected with the control center in a communication mode. According to the microwave plasma chemical vapor deposition (MPCVD) synthesis device, the control method and the synthesis method, by automatic matching of power, atmospheric pressure, temperature and reflecting microwave, dynamic balance is realized, the internal environment of the reaction cavity can be stabilized in the environment which is most suitable for the synthesis of a target product, and the synthesis rate andquality of the target product can be improved; through the automatic matching of the power, atmospheric pressure, temperature, and reflecting microwave, the operating efficiency of the operator is effectively improved, and the time and labor is achieved; and the use efficiency of a magnetron is effectively improved, and the use safety is ensured.

Description

technical field [0001] The invention relates to a microwave plasma chemical vapor deposition (MPCVD) synthesis equipment, a control method and a synthesis method, and belongs to the field of chemical vapor deposition equipment. Background technique [0002] The MPCVD method can not only be used to synthesize diamond, but is also applicable to the preparation of many other materials. The quality of MPCVD synthesized diamond is related to many factors, including carbon source concentration, gas flow rate, substrate stage height, microwave power, synthesis temperature, etc. The synthesis temperature has a great relationship with the quality of the synthetic diamond, so the automatic monitoring and control of the diamond temperature during the synthesis process is very critical. In the prior art, manual adjustment is generally used to adjust various factors and control the synthesis reaction to proceed stably. However, manual adjustment may cause misoperation, and at the same ti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C16/511C23C16/513C23C16/517C23C16/52
CPCC23C16/511C23C16/513C23C16/517C23C16/52
Inventor 黄翀唐跃强彭国令
Owner CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products