Single-chip multi-colored photoelectric detector

Abstract

The invention provides a single-chip multi-colored photoelectric detector, which comprises a substrate, wherein a first absorption layer structure, a second absorption layer structure to an ith absorption layer structure to an Nth absorption layer structure are sequentially formed on the substrate from bottom to top, N is a positive integer larger than 1, and i is a positive integer larger than 1and smaller than or equal to N; each absorption layer structure is provided with a lower contact layer, an absorption layer and an upper contact layer, and the contact layers of the two adjacent absorption layer structures are shared; and the absorption wavelengths of the N absorption layers are gradually increased along a light incidence direction. Through the adoption of the structural design ofa multi-colored detector, multi-colored synchronous detection or selective bandpass detection in the short-wave infrared or visible short-wave spectrum range can be realized.

Description

technical field [0001] The invention belongs to the technical field of semiconductor design and manufacture, and relates to a photoelectric sensor, in particular to a single-chip multicolor photoelectric detector, in particular to a single-chip InGaAs or InGaAsP two-color photoelectric detector. Background technique [0002] The "near-infrared-short-wave infrared" (0.75-2.5μm) spectrum band is the most important band range for applications such as spectral sensing detection, spectral analysis, and wavelength identification. It is widely used in military, industrial, communication, medical, food, biochemical, agricultural, Wide range of applications in public security and other fields. [0003] At present, devices based on InGaAs and HgCdTe are the most mainstream detector technology in the "near-infrared-short-wave infrared" spectral range. In recent years, with the continuous progress of material preparation technology, emerging detector technologies such as type-II superl...

AI Technical Summary

Problems solved by technology

At present, InGaAs two-color detectors mainly adopt two technical approaches: 1) Two detectors of different wavelengths are stacked in the same optical axis direction. The chip assembly of this type of device is complicated, and the optical loss can easily affect the long-wave response sensitivity, and is limited by the structure. It is impossible to make array detectors or focal plane detectors; 2) Customized two-color filter windows, or on-chip integrated dielectric film two-color filter, this technology has complex optical filtering process, high cost, and it is difficult to achieve selective single / Two-color detection regulation

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