Polycrystalline silicon reduction furnace with controllable gas phase

Abstract

The invention discloses a polycrystalline silicon reduction furnace with a controllable gas phase. The polycrystalline silicon reduction furnace comprises a bottom plate and a furnace body, wherein the furnace body is connected on the bottom plate, a reactor inner cavity is formed between the furnace body and the bottom plate, the reactor inner cavity is internally provided with a plurality of electrodes, the electrodes are regularly arranged on the bottom plate, a double-layer air inlet system and an exhaust system are arranged under the bottom plate, a preheating system is arranged on the top of the furnace body, the bottom plate is provided with a plurality of air inlet nozzles, the double-layer air inlet system comprises a double-layer air inlet ring pipe and a plurality of air inlet pipes connected with the double-layer air inlet ring pipe, the air inlet pipes are respectively connected with the nozzles one to one, the bottom plate is provided with a plurality of air outlets, theexhaust system comprises an air outlet coil pipe and a plurality of air outlet pipes connected with the air outlet coil pipe, the air outlet pipes are respectively correspondingly connected with the air outlets one to one, a cooling water flow channel is arranged on the bottom plate, the cooling water flow channel comprises a water inlet and a plurality of water outlets which are arranged at the center of the bottom plate, and the water outlets are in one-to-one correspondence with the air outlets.

Description

technical field [0001] The invention relates to the field of polysilicon production, in particular to a gas phase controllable polysilicon reduction furnace. Background technique [0002] At present, polysilicon production enterprises at home and abroad mainly adopt the "improved Siemens method". The production process is to use chlorine and hydrogen to synthesize hydrogen chloride (or purchased hydrogen chloride), hydrogen chloride and silicon powder to synthesize trichlorosilane at a certain temperature, and then purify trichlorohydrogen After silicon and hydrogen are mixed in a certain proportion, they enter the furnace body from the gas inlet on the chassis of the vapor deposition reactor at a certain temperature and pressure, and deposit polycrystalline silicon on the high-temperature silicon rods that are energized, and the reaction tail gas passes through the outlet on the chassis. Air outlet. The polysilicon vapor deposition reactor is a key reactor for polysilicon ...

AI Technical Summary

Problems solved by technology

The current polysilicon reduction furnaces in actual operation cannot realize the adjustment and control during the growth process, resulting in uncontrollable gas phase flow and temperature, resulting in low conversion rate of raw materials and low product quality

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