Semiconductor light emitting device

Abstract

Described herein is a semiconductor light emitting device. The semiconductor light emitting device according to one embodiment comprises: an n-type semiconductor layer; a V-pit formed through at leastpart of the n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer and filling the V-pit; and a p-type semiconductor layer disposed on the active layer, wherein the active layer includes a plurality of layers and part of the plural layers has a flat shape on the V-pit.

Description

technical field [0001] The invention relates to a semiconductor light-emitting element, in particular to a semiconductor light-emitting element with improved electrostatic discharge characteristics. Background technique [0002] In consideration of economic efficiency and the like, a different substrate is generally used to grow a nitride-based semiconductor layer. For example, a sapphire substrate is widely used to grow nitride-based semiconductor layers. For a nitride-based semiconductor layer grown using a heterogeneous substrate, strain may be generated due to a difference in lattice constant between the substrate and the growth layer, and thus crystal defects may be generated. In particular, threading dislocations in crystal defects may cause leakage and weak antistatic properties, and ultimately, may reduce the reliability of semiconductor light-emitting devices. [0003] The conditions for growing the nitride-based semiconductor layer are adjusted so that a V-shaped...

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Problems solved by technology

Although the V-pit α has the advantage of being able to improve the antistatic property and improve the reliability of the semiconductor light-emitting element, refer to figure 1 , since the active layer 400 in the region where the V-pit α is formed cannot be used as a light emitting region based on the combination of electrons and holes, there is a problem that the light emitting region decreases accordingly

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