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Preparation method of chromium tantalum titanium alloy sputtering target, chromium tantalum titanium alloy sputtering target and application

A tantalum-titanium alloy and sputtering target technology, which is applied in the field of sputtering targets, can solve the problems of inclusion of pores, difficult to achieve density, uneven alloy composition, etc., and achieves high density, convenient operation and excellent machining performance. Effect

Inactive Publication Date: 2018-09-28
KONFOONG MATERIALS INTERNATIONAL CO LTD
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AI Technical Summary

Problems solved by technology

Existing chromium-tantalum-titanium alloy sputtering targets are generally prepared by hot pressing or vacuum melting. The density of chromium-tantalum-titanium alloy sputtering targets sintered by hot pressing is generally below 96%, and the oxygen content is high. The density of the chromium-tantalum-titanium alloy sputtering target made by the hot pressing method is difficult to reach more than 99%, and it is easy to cause defects such as uneven alloy composition and inclusion of pores, which leads to the sputtering of the chromium, tantalum and titanium alloy prepared by the hot pressing method or vacuum melting method. There are big problems in the application of the target

Method used

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  • Preparation method of chromium tantalum titanium alloy sputtering target, chromium tantalum titanium alloy sputtering target and application

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preparation example Construction

[0039] According to one aspect of the present invention, the present invention provides a kind of preparation method of chromium-tantalum-titanium alloy, comprising the following steps:

[0040] (a) providing a mixture of chromium powder, tantalum powder and titanium powder, and carrying out cold isostatic pressing to obtain a blank;

[0041] (b) carry out vacuum degassing to blank;

[0042] (c) performing hot isostatic pressing on the vacuum-degassed billet to obtain a chromium-tantalum-titanium alloy sputtering target.

[0043] The preparation method of the chromium-tantalum-titanium alloy sputtering target material provided by the present invention is to prepare the chromium-tantalum-titanium alloy sputtering target by sequentially subjecting the mixture of chromium powder, tantalum powder and titanium powder to cold isostatic pressing, vacuum degassing and hot isostatic pressing The prepared chromium-tantalum-titanium alloy sputtering target not only has a density higher ...

Embodiment 1

[0082] This embodiment provides a chromium-tantalum-titanium alloy sputtering target, which is prepared according to the following steps:

[0083] (S) Mix chromium powder, tantalum powder and titanium powder in a powder mixer, press argon gas protection, the argon pressure is 0.02MPa, then turn on the powder mixer at 10r / min, the powder mixing time is 20h, and obtain chromium powder , a mixture of tantalum powder and titanium powder;

[0084] (A) Put the mixture of chromium powder, tantalum powder and titanium powder into the rubber sleeve, tamp it tightly, seal the rubber sleeve, and then put the rubber sleeve into a cold isostatic press at a temperature of 25°C and a cold isostatic pressure of 150MPa , keep the pressure for 20min, take out the rubber sleeve from the cold isostatic press, and remove the rubber sleeve to obtain the blank;

[0085] (B) Put the billet into a stainless steel sheath, seal it, then put the stainless steel sheath into a heat treatment furnace and h...

Embodiment 2

[0088] This embodiment provides a chromium-tantalum-titanium alloy sputtering target, which is prepared according to the following steps:

[0089] (S) Mix chromium powder, tantalum powder and titanium powder in a powder mixer, press argon protection, the argon pressure is 0.06MPa, then turn on the powder mixer at 4r / min, the powder mixing time is 30h, and obtain chromium powder , a mixture of tantalum powder and titanium powder;

[0090] (A) Put the mixture of chromium powder, tantalum powder and titanium powder into the rubber sleeve, tamp it tightly, seal the rubber sleeve, and then put the rubber sleeve into a cold isostatic press at a temperature of 25°C and a cold isostatic pressure of 250MPa , keep the pressure for 10min, take out the rubber sleeve from the cold isostatic press, and remove the rubber sleeve to obtain the blank;

[0091](B) Put the billet into a stainless steel sheath, seal it, then put the stainless steel sheath into a heat treatment furnace and heat it...

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Abstract

The invention provides a preparation method of a chromium tantalum titanium alloy sputtering target, the chromium tantalum titanium alloy sputtering target and application, and relates to the technical field of sputtering targets. The preparation method of the chromium tantalum titanium alloy sputtering target comprises the following steps: a mixture of chromium powder, tantalum powder and titanium powder is provided for isostatic cool pressing to obtain a blank; then, the blank is degassed in vacuum; and finally, the hot isostatic pressing is performed on the blank after vacuum degassing to obtain the chromium tantalum titanium alloy sputtering target. The method improves the technical problems in application of the chromium tantalum titanium alloy sputtering target prepared through a hotpressing method or a vacuum smelting method; the chromium tantalum titanium alloy sputtering target is prepared through performing the isostatic cool pressing, the vacuum degassing and the hot isostatic pressing on the mixture of the chromium powder, the tantalum powder and the titanium powder in sequence; and the prepared chromium tantalum titanium alloy sputtering target reaches the compactnessof higher than 99%, is uniform in component, free of air hole and excellent in machining performance, and can guarantee the performances of a magnetic medium substance layer.

Description

technical field [0001] The invention relates to the technical field of sputtering targets, in particular to a preparation method of a chromium-tantalum-titanium alloy sputtering target, a chromium-tantalum-titanium alloy sputtering target and its application. Background technique [0002] With the rapid development of information and computer technology, the study of perpendicular magnetic recording media has attracted widespread attention. The demand for information storage requires computer hard disks to have larger capacity and higher recording areal density. With perpendicular magnetic recording technology, the areal density and capacity of hard drives have shown rapid growth. Yet realize adopting multi-layer vertical structure design in the hard disk medium of recording data, specifically comprise lubricating layer 107, protective layer 106, magnetic recording layer 105, middle layer 104, soft magnetic substrate layer 103, substrate layer 102 and base layer 101 (as fi...

Claims

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Application Information

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IPC IPC(8): B22F3/15C23C14/34B22F3/04G11B5/65G11B5/667G11B5/73G11B5/851
CPCC23C14/3414B22F3/04B22F3/15B22F2998/10G11B5/656G11B5/667G11B5/7325G11B5/851B22F1/0003B22F2201/20
Inventor 姚力军潘杰王学泽吴东青
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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