Image sensor structure and image sensor
An image sensor and pixel unit technology, applied in the semiconductor field, can solve the problems of large image noise, inability to represent the original appearance of the photographed object, influence, etc., and achieve the effect of improving performance, excellent optical characteristics and electrical characteristics
Inactive Publication Date: 2018-09-28
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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In other words, in the CMOS image sensor, each photosensitive element can produce the final digital output, but the obtained digital signal cannot represent the original appearance of the object in the image data, which is reflected in the final output result, that is, there are a large number of images in the image. noise, when the structure of the image sensor becomes smaller and smaller, the influence of the electromagnetic wave will become more and more serious
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[0018] In order to make the objects, features and advantages of the present invention more comprehensible, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those who are familiar with this technology to understand and read, and are not used to limit the implementation of the present invention. Limiting conditions, so there is no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size, without affecting the effect and purpose of the present invention, should still fall within the scope of the present invention. The disclosed technical content must be within the scope covered.
[0019] The core idea of the present invention is to protect the optical path area of the image sensor structure from electromagnetic waves. The inventor fou...
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The invention provides an image sensor structure and an image sensor; the image sensor structure comprises a substrate and a graphene film; a light path area is formed on the substrate, and the graphene film is attached to the light path area; in the image sensor structure and the image sensor provided by the invention, the graphene film is formed on the light path area of the image sensor structure; since the graphene film has excellent optical characteristics and electric characteristics, the influence on the device at the light path area by the electromagnetic wave interference is reduced through the graphene film, and the performance of the image sensor is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to an image sensor structure and an image sensor. Background technique [0002] Image sensors are devices that convert optical signals into electrical signals and are widely used in the visual communication market. According to different photoelectric conversion methods, image sensors can generally be classified into two types: charge-coupled device image sensor (Charge-coupled Device, CCD) and CMOS image sensor (CMOS Image Sensor, CIS). [0003] For a CCD, it usually includes a storage unit for controlling adjacent charges, and the photosensitive diode occupies most of the area. In other words, the effective photosensitive area of the CCD photosensitive element is larger, and under the same conditions It can receive a strong optical signal, and the corresponding output electrical signal is also clearer. In professional scientific research and industrial fields, CCD with h...
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IPC IPC(8): H01L27/146
CPCH01L27/1462
Inventor 刘长振令海阳刘宪周吴亚贞
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP