Sensor packaging structure and manufacturing method therefor

Abstract

The invention provides a sensor packaging structure and a manufacturing method therefor. The sensor packaging structure comprises a bottom carrier plate, a sensor array, an interconnection adapter board, a top adapter board and a signal processing chip. The bottom carrier plate comprises a carrier plate body, a plurality of first electrical contact structures and a plurality of second electrical contact structures, wherein the first electrical contact structures are electrically connected with the second electrical contact structures. The sensor array comprises a plurality of sensors arrangedin an array. The interconnection adapter board comprises an interconnection adapter board body and an interconnection structure. The top adapter board comprises a top adapter board body, a third electrical contact structure, a fourth electrical contact structure and a top electrical connection structure. The signal processing chip comprises a plurality of signal contact structures, and the signalcontact structures are electrically connected with some first electrical contact structures in the bottom carrier plate in a one-to-one corresponding manner. In the packaging structure, the top adapter board and the interconnection adapter board are employed for achieving the installation of the sensors and the interconnection of front and back surfaces, thereby reducing the area of a detection dead zone, and improving the detection sensitivity.

Description

technical field [0001] The present application relates to the field of semiconductor packaging, in particular, to a sensor packaging structure and a manufacturing method thereof. Background technique [0002] Silicon photomultiplier (SiPM) is a new type of low-light detector, which is composed of hundreds to tens of thousands of avalanche photodiode (Avalanche PhotoDiode: APD) units with a size of several microns to tens of microns, that is, pixels integrated in the same APD matrix formed on silicon single crystal. Among them, each APD unit works in Geiger mode (Geiger mode), and a quenching resistor with a resistance value of about 200KΩ to 1MΩ is connected in series, wherein the quenching resistor can be formed on the surface of the SiPM (this SiPM can be called surface quenching resistance type SiPM) or formed inside the silicon material of SiPM (this SiPM may be called epitaxial quenching resistance type SiPM). When an APD unit receives photons, the carriers excited by...

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Problems solved by technology

[0005] The main purpose of this application is to provide a sensor packaging structure and its manufacturing method to solve the problem of large dead zone area in the sensor packaging structure in the prior art

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