Memory cell and formation method, and storage array structure and formation method

Abstract

A memory cell and a formation method, and a storage array structure and a formation method are disclosed. The formation method of the memory cell comprises the following steps of providing a substrate, wherein the substrate includes a first diode region, a second diode region, a third diode region, and a fourth diode region which are successively arranged along a row direction; forming first wellregions in the substrate of the first diode region and the second diode region; forming a second well regions in the substrate of the third diode region and the fourth diode region, wherein the dopingtype of the second well region is different from the doping type of the first well region; forming doped conductive regions in the first well region and the second well region; and forming a deep groove isolation structure in the substrate, wherein the deep groove isolation structure electrically isolates the first well region of the first diode region from the first well region of the second diode region, and electrically isolates the second well region of the third diode region from the second well region of the fourth diode region. In the invention, a photoetching technology window formingthe well region is added so that the formed memory cell and a memory array structure area can be made smaller.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a storage unit and its forming method, a storage array structure and its forming method. Background technique [0002] Semiconductor memory is an indispensable part of various electronic equipment systems, and non-volatile semiconductor memory has the characteristics of being able to save data even when the power is turned off, so it is widely used in various mobile and portable devices, such as mobile phones and notebooks , Pocket PC, etc. Resistive random access memory (RRAM, Resistance Random Access Memory) has the advantages of simple preparation process, fast read and write speed, high storage density, non-volatile and good compatibility with traditional silicon integrated circuit technology, so it is widely used in the field of semiconductor memory It has great application potential. [0003] RRAM is a non-volatile memory developed based on the electri...

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Problems solved by technology

[0005] However, the performance of the storage structure formed by the prior art still needs to be improved

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