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Power electronic device, single-phase converter and three-phase converter adopting the power electronic device

A technology of power electronic devices and three-phase converters, which is applied in the direction of high-efficiency power electronic conversion, electrical components, and conversion of AC power input to DC power output. Loss and other issues to achieve the effect of improving equipment efficiency, reducing volume and weight, and improving performance

Inactive Publication Date: 2018-10-09
JIANGSU GOODWE POWER SUPPLY TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

MOSFET can work at a higher switching frequency, but due to the poor reverse recovery characteristics of MOSFET body diode, the application of MOSFET is limited
There is a tail current when the IGBT is turned off, and there is a large switching loss when the switching frequency is high, which is not conducive to improving efficiency

Method used

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  • Power electronic device, single-phase converter and three-phase converter adopting the power electronic device
  • Power electronic device, single-phase converter and three-phase converter adopting the power electronic device
  • Power electronic device, single-phase converter and three-phase converter adopting the power electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Example 1: As attached figure 1 As shown, a power electronic device includes a first element, a second element, and a third element. Among them, the first element is a high-voltage MOSFET tube MOS1, the second element is a low-voltage MOSFET tube MOS2, and the third element is a high-voltage diode DIODE. The conduction performance of low voltage MOSFET and its body diode characteristics are generally better than that of high voltage MOSFET.

[0023] The first element and the second element are connected in reverse series to form a series structure, that is, the source of the high-voltage MOSFET tube MOS1 is connected to the drain of the low-voltage MOSFET tube MOS2, and the drain of the high-voltage MOSFET tube MOS1 forms the first end of the series structure, the low-voltage MOSFET The source of MOS2 constitutes the second end of the series structure. The third element is connected in anti-parallel to the two ends of the series structure formed by the first element and t...

Embodiment 2

[0027] Example 2: As attached figure 2 As shown, a single-phase converter is connected between a DC power supply and an AC power supply. It includes a first device Module1, a second device Module2, a third device Module3, and a fourth device Module4. The first device Module1, the second device The device Module2, the third device Module3 and the fourth device Module4 all use the aforementioned power electronic devices. The first device Module1 and the third device Module3 are connected in series to form a first bridge arm, that is, the second end of the first device Module1 is connected to the first end of the second device Module2. The second device Module2 and the fourth device Module4 are connected in series to form a second bridge arm, that is, the second end of the second device Module2 is connected to the first end of the fourth device Module4. The first bridge arm and the second bridge arm are connected in parallel. The two ends of the first bridge arm and the second br...

Embodiment 3

[0029] Embodiment 3: As attached image 3 As shown, a single-phase converter includes a first device Module1, a second device Module2, a third device Module3, a fourth device Module4, a fifth device Module5, and a sixth device Module6. The first device Module1, the second device The device Module2, the third device Module3, the fourth device Module4, the fifth device Module5 and the sixth device Module6 all use the aforementioned power electronic devices. The first device Module1 and the third device Module3 are connected in series to form a first bridge arm, that is, the second end of the first device Module1 is connected to the first end of the third device Module3. The second device Module2 and the fourth device Module4 are connected in series to form a second bridge arm, that is, the second end of the second device Module2 is connected to the first end of the fourth device Module4. The first bridge arm and the second bridge arm are connected in parallel. The fifth device M...

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Abstract

The invention relates to a power electronic device. The device comprises a first component, a second component and a third component. The first component is a high voltage MOSFET pipe or n high voltage MOSFET pipes which are connected in parallel at a same direction. The second component is a low voltage MOSFET pipe and a third component is a high voltage diode. The first component and the secondcomponent are reversely connected in series. The third component is reversely connected in parallel to the two ends of a series-connection structure formed by the first component and the second component. The grids of the first component and the second component are connected. The invention also relates to a single-phase / three-phase converter adopting the power electronic device. By using the power electronic device, equipment efficiency can be greatly improved, a power density is increased, switch losses are reduced and the performance of equipment adopting the device can be increased. The single-phase / three-phase converter can work at a high switch frequency, a magnetic component volume and weight can be reduced, the power density of the converter is increased, cost is reduced and efficiency is improved.

Description

Technical field [0001] The invention belongs to the technical field of power electronics, relates to a power electronic device, which can be applied to power electronic equipment such as a converter, and also relates to a single-phase / three-phase converter using the power electronic device. Background technique [0002] Power electronic devices are the core components of power electronic equipment. At present, the commonly used power electronic devices of power electronic equipment are MOSFET (Metal-Oxide-SemiconductorField-Effect Transistor), IGBT (Insulated Gate Bipolar) Type transistor, English: Insulated Gate BipolarTransistor) etc. [0003] MOSFET is a majority carrier device, which can be divided into P-channel and N-channel according to the difference of channel semiconductor materials; according to the conduction mode, it can be divided into depletion type and enhancement type. N-channel enhancement mode MOSFETs are commonly used in power electronic equipment such as photo...

Claims

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Application Information

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IPC IPC(8): H02M7/5387
CPCH02M7/5387H02M1/0054Y02B70/10
Inventor 郝齐心周璨谢胜仁黄敏方刚卢进军
Owner JIANGSU GOODWE POWER SUPPLY TECHNOLOGY CO LTD
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