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High electron mobility transistor and manufacturing method

A high electron mobility and manufacturing method technology, applied in the field of high electron mobility transistors and manufacturing, can solve the problems of low repeatability, high time consumption, high cost, etc., achieve the effect of reducing impurity defects and improving growth quality

Inactive Publication Date: 2018-10-16
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method is time-consuming, costly and has low reproducibility, and is not yet widely used
[0007] To sum up, at present, the method of realizing waterproof and oxygen-proof AlGaN / GaN high electron mobility transistors at home and abroad mainly adopts SiN passivation technology, and the effect is not ideal.

Method used

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  • High electron mobility transistor and manufacturing method
  • High electron mobility transistor and manufacturing method

Examples

Experimental program
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Embodiment 1

[0028] See figure 1 , figure 1 A schematic flow chart of a method for preparing a high electron mobility transistor provided in an embodiment of the present invention, including:

[0029] S101. Select an epitaxial substrate; the epitaxial substrate sequentially includes a substrate, an AlN nucleation layer, a GaN buffer layer, an AlN insertion layer, an AlGaN barrier layer, and a GaN cap layer from bottom to top;

[0030] S102, making a source electrode and a drain electrode on the epitaxial substrate;

[0031] S103, sequentially growing a first passivation layer and a second passivation layer on the surface of the epitaxial substrate to form a stacked passivation structure;

[0032] S104, photoetching a gate groove, growing a gate dielectric layer on the gate groove and the second passivation layer;

[0033] S105 , preparing a gate electrode and a metal interconnection layer to complete the preparation of the high electron mobility transistor.

[0034] Specifically, the f...

Embodiment 2

[0054] Please refer to Figure 2, Figure 2a-2i It is a schematic flow chart of a manufacturing process of a high electron mobility transistor provided by the embodiment of the present invention. This embodiment describes in detail the manufacturing process of the high electron mobility transistor of the present invention on the basis of the first embodiment. include:

[0055] S201, such as Figure 2a As shown, the source and drain electrodes are fabricated on the GaN buffer layer of the epitaxial substrate.

[0056] Among them, the epitaxial substrate can be the initially purchased epitaxial substrate, or it can be the manufactured epitaxial substrate, and the epitaxial substrate includes substrate, nucleation layer, GaN buffer layer, AlN insertion layer, AlGaN potential barrier layer and GaN cap layer.

[0057] Specifically, the substrate is a sapphire substrate.

[0058] S2011, photoetching the source electrode region and the drain electrode region on the GaN cap layer: ...

Embodiment 3

[0138] Further, please refer to image 3 , image 3 The flow chart of another method for manufacturing a high electron mobility transistor provided by the embodiment of the present invention is described in detail in this embodiment on the basis of the first embodiment. Specifically include:

[0139] S301. Select an epitaxial substrate.

[0140] Wherein, the epitaxial substrate sequentially includes a substrate, a nucleation layer, a GaN buffer layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer from bottom to top.

[0141] Specifically, the substrate is a SiC substrate.

[0142] S302 , fabricating a source electrode and a drain electrode on the GaN buffer layer of the epitaxial substrate.

[0143] Wherein, the epitaxial substrate sequentially includes a SiC substrate, a nucleation layer, a GaN buffer layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer from bottom to top.

[0144] S3021, photoetching a source electrode region an...

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Abstract

The invention relates to a high electron mobility transistor and a manufacturing method. The manufacturing method comprises the following steps: S101, selecting an epitaxial substrate, wherein the epitaxial substrate comprises a substrate, an AlN nucleating layer, a GaN buffer layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer from bottom to top in sequence; S102, manufacturing a source electrode and a drain electrode on the epitaxial substrate; S103, growing a first passivation layer and a second passivation layer on the surface of the epitaxial substrate in sequence; S104, photoetching a grid electrode groove, and growing grid dielectric layers on the grid electrode groove and the second passivation layer; and 105, preparing a grid electrode and a metal interconnecting layer so as to complete the preparation of the high electron mobility transistor. According to the high electron mobility transistor and the manufacturing method provided by the invention, an Al2O3 layer is grown on an SiN layer again, and water molecules and oxygen inside air can be effectively blocked from entering into the transistor, so that the current collapse amount is decreased to theminimum.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a high electron mobility transistor and a manufacturing method thereof. Background technique [0002] With the improvement of technology level, the existing first and second generation semiconductor materials can no longer meet the needs of higher frequency and higher power electronic devices, while electronic devices based on nitride semiconductor materials can meet this requirement, greatly improving device performance. Due to the high two-dimensional electron gas density and high electron mobility in the AlGaN / GaN heterostructure, it has very good application prospects in high-power microwave devices. [0003] Passivation of AlGaN / GaN is particularly important because there are Al and Ga atoms combined with oxygen on the surface of AlGaN / GaN high electron mobility transistors, which reduces the concentration of two-dimensional electron gas generated by po...

Claims

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Application Information

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IPC IPC(8): H01L21/335H01L29/778
CPCH01L29/66462H01L29/778
Inventor 马晓华祝杰杰刘捷龙贾富春陈丽香
Owner XIDIAN UNIV
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