Multi-quantum well layer, LED epitaxial structure and preparation method thereof

A multi-quantum well layer and quantum well layer technology, which is applied in the field of InGaN/GaN multi-quantum well layer, LED epitaxial structure and its preparation, and LED epitaxial structure. , Reduce the luminous intensity and other issues, to achieve the effect of not deteriorating the crystal quality, improving the uniformity of the luminous wavelength, and increasing the luminous intensity

Inactive Publication Date: 2018-10-19
HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
View PDF3 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, facing the demand for high-performance light-emitting devices in the semiconductor lighting market, LED technology still faces two problems that need to be solved urgently: first, the quantum-bound Stark effect generated by the polarization electric field in the light-emitting active region affects the The radiative recombination of carriers in the quantum well reduces the luminous intensity of the L

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-quantum well layer, LED epitaxial structure and preparation method thereof
  • Multi-quantum well layer, LED epitaxial structure and preparation method thereof
  • Multi-quantum well layer, LED epitaxial structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0075] Example 1:

[0076] Reference figure 1 The present invention provides an InGaN / GaN multiple quantum well layer with a graded silicon-doped quantum barrier. The structure is composed of x InGaN quantum well layers and (x+1) GaN quantum barrier layers alternately stacked, x≥1 The thickness of the InGaN quantum well layer is 3-5nm; the molar ratio of the In component of the InGaN quantum well layer is 0.1-0.2; the thickness of the GaN quantum barrier layer is 10-15nm; the silicon doping of the first GaN quantum barrier layer The density is 5×10 17 -1×10 19 cm -3 , The silicon doping concentration of the second GaN quantum barrier layer is y times the silicon doping concentration of the first GaN quantum barrier layer...The silicon doping concentration of the i-th GaN quantum barrier layer is the first GaN quantum barrier Layer silicon doping concentration y i-1 Times, 0.5

[007...

Example Embodiment

[0093] Example 2:

[0094] The characteristics of this embodiment are: Step 3) The temperature of the reaction chamber is maintained at 800-1000°C, the pressure is maintained at 200 Torr, and an InGaN / GaN multiple quantum well layer 6 with a graded silicon-doped quantum barrier is grown, of which 4 are grown according to the following sub-steps The InGaN quantum well layer and 5 GaN quantum barrier layers; the others are the same as in Embodiment 1.

Example Embodiment

[0095] Example 3:

[0096] The characteristics of this embodiment are: Step 3) The temperature of the reaction chamber is maintained at 800-1000°C, the pressure is maintained at 200 Torr, and an InGaN / GaN multiple quantum well layer 6 with a graded silicon-doped quantum barrier is grown, of which 6 are grown according to the following substeps The InGaN quantum well layer and 7 GaN quantum barrier layers; the others are the same as the first embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a multi-quantum well layer which is formed by x InGaN quantum well layers and (x+1) GaN quantum barrier layers which are alternately laminated, wherein X>=1. The molar ratio ofthe In component of the InGaN quantum well layers is 10-20%. The silicon doping concentration of the first GaN quantum barrier layer is 5x10<17>-1x10<19>cm<-3>. The silicon doping concentration of the second GaN quantum barrier layer is y times of the silicon doping concentration of the first GaN quantum barrier layer. The silicon doping concentration of the ith GaN quantum barrier layer is y<i-1> times of the silicon doping concentration of the first GaN quantum barrier layer, wherein 0.5<y<1 and 1<i<=x. The silicon doping concentration of the (x+1)th GaN quantum barrier layer is zero. The invention also discloses an LED epitaxial structure and a preparation method thereof. The multi-quantum well layer has gradient silicon doped quantum barriers so that the electron concentration in thequantum well can be increased and the light-emitting region in the quantum well can be regulated and controlled without further deterioration of the material quality, and thus the luminous intensity of the LED can be enhanced and the luminous wavelength uniformity can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to an LED epitaxial structure, in particular to an InGaN / GaN multi-quantum well layer with a gradient silicon-doped quantum barrier, an LED epitaxial structure and a preparation method thereof. Background technique [0002] Light-emitting diodes (LEDs) have the characteristics of high efficiency, energy saving, safety, environmental protection, and long life, and have been widely used in many fields. The semiconductor lighting technology represented by it has led the third-generation lighting revolution. However, facing the demand for high-performance light-emitting devices in the semiconductor lighting market, LED technology still faces two problems that need to be solved urgently: first, the quantum-bound Stark effect generated by the polarization electric field in the light-emitting active region affects the The radiative recombination of carriers in the quantum well reduces...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/00H01L33/06H01L33/12H01L33/14
CPCH01L33/06H01L33/0075H01L33/12H01L33/145
Inventor 李国强
Owner HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap