Multi-quantum well layer, LED epitaxial structure and preparation method thereof

Abstract

The invention discloses a multi-quantum well layer which is formed by x InGaN quantum well layers and (x+1) GaN quantum barrier layers which are alternately laminated, wherein X>=1. The molar ratio ofthe In component of the InGaN quantum well layers is 10-20%. The silicon doping concentration of the first GaN quantum barrier layer is 5x10<17>-1x10<19>cm<-3>. The silicon doping concentration of the second GaN quantum barrier layer is y times of the silicon doping concentration of the first GaN quantum barrier layer. The silicon doping concentration of the ith GaN quantum barrier layer is y<i-1> times of the silicon doping concentration of the first GaN quantum barrier layer, wherein 0.5<y<1 and 1<i<=x. The silicon doping concentration of the (x+1)th GaN quantum barrier layer is zero. The invention also discloses an LED epitaxial structure and a preparation method thereof. The multi-quantum well layer has gradient silicon doped quantum barriers so that the electron concentration in thequantum well can be increased and the light-emitting region in the quantum well can be regulated and controlled without further deterioration of the material quality, and thus the luminous intensity of the LED can be enhanced and the luminous wavelength uniformity can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to an LED epitaxial structure, in particular to an InGaN / GaN multi-quantum well layer with a gradient silicon-doped quantum barrier, an LED epitaxial structure and a preparation method thereof. Background technique [0002] Light-emitting diodes (LEDs) have the characteristics of high efficiency, energy saving, safety, environmental protection, and long life, and have been widely used in many fields. The semiconductor lighting technology represented by it has led the third-generation lighting revolution. However, facing the demand for high-performance light-emitting devices in the semiconductor lighting market, LED technology still faces two problems that need to be solved urgently: first, the quantum-bound Stark effect generated by the polarization electric field in the light-emitting active region affects the The radiative recombination of carriers in the quantum well reduces...

AI Technical Summary

Problems solved by technology

However, facing the demand for high-performance light-emitting devices in the semiconductor lighting market, LED technology still faces two problems that need to be solved urgently: first, the quantum-bound Stark effect generated by the polarization electric field in the light-emitting active region affects the The radiative recombination of carriers in the quantum well reduces the luminous intensity of the LED; second, the traditional structure of the LED has the phenomenon of multi-well luminescence in the quantum well, resulting in inconsistent luminous wavelengths and poor wavelength uniformity.

The above two points limit the application of LEDs in special fields such as communications, military industry, etc., and also limit the further improvement of the performance of high-performance, high-power LED devices

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