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Semiconductor structure and formation method thereof

A technology of semiconductor and gate structure, applied in the field of semiconductor structure and its formation, can solve the problems of limited performance of semiconductor devices, and the performance of semiconductor devices needs to be further improved.

Active Publication Date: 2018-10-23
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the ability of the LDD implantation process to improve the performance of semiconductor devices is limited, and the performance of said semiconductor devices needs to be further improved

Method used

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  • Semiconductor structure and formation method thereof
  • Semiconductor structure and formation method thereof
  • Semiconductor structure and formation method thereof

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Embodiment Construction

[0034] There are many problems in the method of forming the semiconductor structure, for example, the performance of the semiconductor device is poor.

[0035] Combining with a method of forming a semiconductor structure, the reasons for the poor performance of semiconductor devices are analyzed:

[0036] Figure 1 to Figure 2 It is a structural schematic diagram of each step of a method for forming a semiconductor structure.

[0037] Please refer to figure 1 , provide a substrate 100, the substrate 100 includes: a first region I and a second region II, the substrate 100 of the first region I has a first gate structure 101, and the substrate 100 of the second region II has a second Gate structure 102; forming a first lightly doped region 103 in the substrate 100 on both sides of the first gate structure 101; forming a second lightly doped region in the substrate 100 on both sides of the second gate structure 102 District 104.

[0038] The first region I is used to form NMO...

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Abstract

A semiconductor structure and a formation method thereof are disclosed. The method comprises the following steps of providing a substrate, wherein the substrate is provided with a grid structure; forming light-doped areas in the substrate of the two sides of the grid structure, wherein the light-doped areas have light-doped ions; forming rich gap areas in the substrate of the two sides of the gridstructure, wherein the rich gap areas have gaps and the rich gap areas are overlapped with parts of the light-doped areas; and forming source-drain areas in the parts of the light-doped areas and inthe parts of substrate, wherein the source-drain areas have source-drain ions, and the parts of source-drain areas are overlapped with the rich gap areas. Through the rich gap areas, the saturation driving current of a transistor is increased, a leakage current is reduced and the performance of a semiconductor device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the shrinking of the channel length of semiconductor devices, in order to obtain the required driving current and suppress the short channel effect, a better concentration doped semiconductor substrate and source / drain are usually used, so that the depletion of the source / drain area generates a high electric field. When the high-voltage input / output device operates in a saturated current state, the inversion layer charges are accelerated under the action of the lateral electric field on the channel surface and collide with the crystal lattice to generate a large number of hot carriers (electron-hole pairs) . Hot electrons and hot holes can be emitted to the gate dielectric layer across the interface barrier, forming a hot-carrier injection effect (Hot-Carrier Injection, HCI). T...

Claims

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Application Information

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IPC IPC(8): H01L21/8238H01L27/092H01L29/06H01L29/08
CPCH01L21/8238H01L27/092H01L29/0607H01L29/0684H01L29/0847
Inventor 魏琰宋化龙徐唯佳
Owner SEMICON MFG INT (SHANGHAI) CORP
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