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MEMS sound transducer element and method for producing a MEMS sound transducer element

A technology of acoustic transducers and components, applied in the direction of electrostatic transducer speakers, electrostatic transducer microphones, transducer shells/cabinets/brackets, etc., can solve problems such as adverse effects

Active Publication Date: 2018-10-23
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the size ratio between the back volume 1250 and the package size is adversely affected due to the fact that a single die 1202, 1203 is disposed within the provided cavity 1208

Method used

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  • MEMS sound transducer element and method for producing a MEMS sound transducer element
  • MEMS sound transducer element and method for producing a MEMS sound transducer element
  • MEMS sound transducer element and method for producing a MEMS sound transducer element

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Embodiment Construction

[0039] In the following, preferred embodiments are described in more detail with reference to the drawings, in which elements having the same or similar function are provided with the same reference numerals. Subsequent method steps can also be carried out in an order different from that described. Also, some steps are optional.

[0040] figure 1 A block diagram of a method for fabricating a MEMS acoustic transducer element according to the present disclosure is shown.

[0041] In block 101, a first substrate is provided having a first substrate side, an opposing second substrate side, and a film layer disposed on the first substrate side.

[0042] In block 102 , a first etching is carried out, starting from the second substrate side, in a first surface section opposite the membrane layer, down to a first depth.

[0043] In block 103, from the second substrate side, a second etch is performed in a second face segment larger than and including the first face segment to expo...

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Abstract

The invention relates to a MEMS sound transducer element (100) and a method for producing the MEMS sound transducer element (100). The method for producing a MEMS sound transducer element (100) includes the step of providing a first substrate (200). The first substrate (200) has a first substrate side (201), an opposite second substrate side (202) and a membrane layer (203) arranged on the first substrate side (201). A further method step includes performing a first etching from the second substrate side (202) in a first surface section (221) that is situated opposite the membrane layer (203),as far as a first depth (d1). A further method step includes performing a second etching of the first substrate from the second substrate side (202) in a second surface section (222) in order to expose the membrane layer (203) in the first surface section (221) and to produce a back volume for the membrane layer (203), where the second surface section (222) is larger than the first surface section (221) and includes the first surface section (221).

Description

technical field [0001] Embodiments of the present disclosure relate to MEMS acoustic transducer elements and to methods for manufacturing MEMS acoustic transducer elements or wafer layer packaging for MEMS microphones. Background technique [0002] The MEMS acoustic transducer element (MEMS: microelectromechanical system) can be formed, for example, in the form of a MEMS microphone or in the form of a MEMS speaker or the like. At this time, the following two requirements are especially put forward for such MEMS acoustic transducer elements: [0003] High acoustic performance in terms of large signal-to-noise ratio (SNR), [0004] small package size. [0005] Acoustic performance is directly related to the so-called back volume. The general rule here is: the larger the back volume, the better the acoustic performance. The first requirement in terms of high acoustic performance is therefore largely associated with a large rear volume and thus of course also inevitably with...

Claims

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Application Information

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IPC IPC(8): H04R19/00H04R31/00
CPCH04R19/00H04R31/00H04R2231/00B81C1/00238H04R1/04B81B2201/0257B81B2207/012B81C2203/0118B81C2203/0792H04R31/003H04R2201/003B81B7/0061B81B2203/0127B81B2203/0315B81C1/00309B81C2201/013H04R7/06H04R19/02H04R19/04
Inventor M·施泰尔特H·托伊斯
Owner INFINEON TECH AG
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