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Plasma processing device of gaseous waste

A treatment device and gaseous waste technology, applied in the direction of plasma, electrical components, etc., can solve the problems of difficult pollutant treatment, short reaction time, and limited reaction area

Active Publication Date: 2018-11-02
航天环保(北京)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with the suspended photocatalytic reactor 10, the reaction area of ​​the photocatalyst is limited to the coating area of ​​the photocatalyst coating tube 25
Therefore, when dealing with liquid pollutants and gaseous pollutants with high flow rates and high flow rates (for example, in factories), the reaction time between photocatalysts and gaseous pollutants is short, which makes the treatment of pollutants difficult, thus reduce processing efficiency

Method used

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  • Plasma processing device of gaseous waste
  • Plasma processing device of gaseous waste
  • Plasma processing device of gaseous waste

Examples

Experimental program
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Effect test

no. 1 example

[0030] image 3 It is the composition circuit diagram of the high voltage source provided by the first embodiment of the present invention, such as image 3As shown, the high voltage source includes a boost coil and an active resonator, and the secondary coil 122 of the boost coil forms a resonant circuit with the discharge capacitor Cp; the active resonator includes at least a secondary coil coupled with the boost coil Coil L21, the active resonator resonates to cause the resonant tank to resonate so as to ionize the gas charged into the container to form a plasma, said plasma including at least free radicals.

[0031] The active resonator includes a feedback loop, an amplifier A1, a first drive circuit A2, a second drive circuit A3, a gate drive transformer B1, a first N-channel field effect transistor T1, a second N-channel field effect transistor T2, and a first capacitor C1 And the second capacitor C2, the gate drive transformer B1 includes a primary coil L11 and two sec...

no. 2 example

[0033] Figure 4 It is the composition circuit diagram of the high voltage source provided by the second embodiment of the present invention, such as Figure 4 As shown, the difference between the high voltage source provided by the second embodiment of the present invention and the high voltage source provided by the first embodiment is only the feedback loop, the feedback loop in the second embodiment includes a transformer B3, and the coil L21 is provided with a center tap , the tap is connected to one end of the primary coil L31 of the transformer B3, and the other end of the coil L31 is connected to the output end of the bridge conversion circuit, that is, the source of the first N-channel field effect transistor T1. One end of the secondary coil L32 of the transformer B3 is connected to the amplifier through the variable resistor RW and the capacitor C4, and the other end is connected to the ground. The two ends of the secondary coil L32 of the transformer B3 are connect...

no. 3 example

[0036] Figure 5 It is the composition circuit diagram of the high voltage source provided by the third embodiment of the present invention, such as Figure 5 As shown, the only difference between the third embodiment of the invention and the second embodiment is the primary resonant circuit. In the third embodiment, a capacitor C5 is connected in series with the coil L21 of the primary circuit of the active resonator, and the drive circuit outputs the frequency Equal to the natural frequency of the primary LC equal to the natural frequency of the discharge circuit LC, so that the primary part is in a resonant state, its load characteristics are purely resistive, the power factor is high, and the energy utilization rate is improved. At the same time, because the primary part is resonant, the primary The current rises faster and the instantaneous current is larger. In the third embodiment, the first end of the capacitor C5 is connected to the source of the first N-channel FET,...

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Abstract

The invention relates to a plasma processing device of gaseous waste. The plasma processing device comprises a container (101), a plasma electrode and a high-voltage source, wherein the plasma electrode comprises a columnar first plasma electrode (108) and a cylindrical second plasma electrode (104), the columnar first plasma electrode (108) is arranged in the container and extends along an axialline of the container, the cylindrical second plasma electrode (104) encircles the first plasma electrode along a circumferential direction of the container, a cylindrical or columnar dielectric partis arranged between the first plasma electrode and the second plasma electrode and comprises a plurality of dielectric spheres, each dielectric sphere is of a hollow spherical structure, and a plurality of air holes are formed in spherical surfaces along radial directions. The plasma processing device of the gaseous waste is small in size, low in cost and high in efficiency.

Description

technical field [0001] The invention relates to a plasma treatment device for gaseous wastes, in particular to a plasma treatment device for gaseous wastes which is small in size, low in price and high in efficiency for treating gaseous wastes. Background technique [0002] With the rapid development of global industry, the problem of environmental pollution has become more serious, and strict regulation of pollution control is required. Moreover, the diversification of types of pollution sources and the continuous generation of new pollutants have triggered various approaches to more effectively address pollution problems. [0003] A recently developed method involves the use of photocatalytic reactions to treat pollutants, which is relatively unaffected by temperature, pH, etc., and does not require strict treatment conditions. In addition, the method of treating pollutants using photocatalytic reactions can use clean energy such as sunlight, and thus has the advantages o...

Claims

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Application Information

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IPC IPC(8): H05H1/24H05H1/36
CPCH05H1/2406H05H1/36
Inventor 吴穹
Owner 航天环保(北京)有限公司
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