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Multi-chip isolated sram instantaneous dose rate effect online test system

A technology of dose rate effect and online testing, which is applied in the direction of static memory and instruments, can solve problems such as inaccuracy of test data, data crosstalk, and difficulty in ensuring data stability, so as to avoid data crosstalk, improve reliability, and improve Effects of Accuracy and Reliability

Active Publication Date: 2020-08-14
NORTHWEST INST OF NUCLEAR TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The SRAM instantaneous dose rate effect test system mentioned above is characterized by the use of a 50-meter long shielded cable for data transmission. During the 50-meter long-distance data transmission process, due to long-distance data reflection, the stability of the data is difficult to be guaranteed.
And in the process of data transmission, all irradiated SRAM devices share all address lines and data lines, so in the case of interference or poor contact, data crosstalk may occur, resulting in inaccurate test data

Method used

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  • Multi-chip isolated sram instantaneous dose rate effect online test system
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  • Multi-chip isolated sram instantaneous dose rate effect online test system

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Embodiment Construction

[0035] The present invention will be further described now in conjunction with accompanying drawing:

[0036] Such as figure 1 As shown, the components of this embodiment include a PC computer 1, a power supply system box 2, a main control system box 3, and an irradiation box 4, wherein the PC computer 1 and the power supply system box 2 are located in the near-end shielding test room, and the main control system box 3. The irradiation box 4 is located in the remote irradiation room.

[0037] The PC computer 1 is connected to the power system box 2 through the RS232 serial port connection line 5 so as to control the power supply of the whole system. The power supply system box 2 is connected with the main control system box 3 through two 50-meter power supply lines 7 and eight 50-meter-long relay control lines (both 50-meter long coaxial shielded cables) 6 . The main control system box 3 is connected to the irradiation box 4 through two J30J-66 interfaces, one J30J-31 interf...

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Abstract

The invention relates to a transient dosage rate effect online test system for a multi-chip isolation SRAM. According to the system, the isolation switching of multiple SRAM chips is realized, and meanwhile, the data reliability of the transient dosage rate effect test of the SRAM is ensured. The system mainly comprises a PC, a power supply system box, a main control system box and an irradiationcapsule; the PC is connected with the power supply system box through an RS232 serial port connecting line; the power supply system box is connected with the main control system box through two 50-meter power lines and N 50-meter relay control lines; the irradiation box is connected with the main control system box through an LVDS cable; the main control system box conducts data transmission withthe PC through a 50-meter gigabit Ethernet line; the PC and the power supply system box are both arranged in a near-end shielding test room; the irradiation box and the main control system box are both arranged in a far-end irradiation room; and a relay switch matrix is installed on the same plane of each target test board of the irradiation box.

Description

technical field [0001] The invention relates to a static random access memory suitable for SRAM, in particular to a multi-chip isolated SRAM instantaneous dose rate effect online testing system. Background technique [0002] SRAM (Static Random Access Memory) is widely used in electronic systems due to its fast access speed. As one of the core devices of electronic systems, SRAM devices may encounter instantaneous ionizing radiation environments in practical applications, resulting in instantaneous dose rate effects. , the instantaneous dose rate effect of SRAM directly affects the radiation resistance of electronic systems. The test technology of SRAM radiation effect is the key technology to correctly evaluate its radiation resistance ability and scientifically study the law of its radiation effect. It is of great significance to the radiation resistance performance assessment and radiation resistance reinforcement design of SRAM. [0003] Foreign countries have carried o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/56
CPCG11C29/56
Inventor 李俊霖齐超陈伟李瑞宾杨善潮
Owner NORTHWEST INST OF NUCLEAR TECH
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