SONOS memory and preparation method thereof
A technology of memory and charge storage layer, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problem that the data retention ability needs to be improved, and achieve the effect of improving the data retention ability
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0033] figure 1 It is a cross-sectional view of a typical SONOS memory structure. like figure 1 As shown, a typical SONOS memory structure is composed of silicon substrate 10(S)-tunneling oxide layer 20(O)-charge storage layer silicon nitride 30(N)-blocking oxide layer 40(O)-polysilicon gate 50( S) composition. The storage principle of the SONOS memory structure is that electrons and holes in the substrate tunnel through the oxide layer under the action of gate bias to realize data writing and erasing.
[0034] However, the inventor found that the data retention of the SONOS memory is carried out without power supply, and with the growth of time, the electrons or holes stored in the silicon nitride layer film continue to overflow, resulting in data loss. Therefore, a charge storage layer with stronger charge storage capacity is required to improve the charge storage capacity of the SONOS memory.
[0035] Based on the above findings, embodiments of the present invention pro...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2023 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap