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A kind of preparation method of nanometer device

A nano-device and nano-technology, applied in the field of preparation of nano-devices, can solve the problems of expensive equipment, limit the production and processing of nano-devices, and be unfavorable for large-scale application of nano-devices, and achieve the effects of reducing production costs and simple methods.

Active Publication Date: 2020-02-07
TSINGHUA UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These technologies have the advantages of high resolution and accurate positioning, but such technologies need to rely on cutting-edge exposure and etching equipment, and the corresponding equipment is expensive, which greatly limits the production and processing of nano-devices, which is not conducive to the development of nano-devices in the industry. large-scale applications on
In addition, the nanopatterns formed on the substrate often depend on the nanopatterns on the mask used in the etching technology, which are usually artificially designed and regularly arranged patterns, while the formation of fractal nanostructure patterns on the substrate Less reported

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  • A kind of preparation method of nanometer device

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Embodiment Construction

[0027] The preparation method of a nano-device provided by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0028] See figure 1 and figure 2 , the invention provides a kind of preparation method of nano device, it specifically comprises the following steps:

[0029] Step S1, providing a first substrate 101;

[0030] Step S2, depositing a metal film 102 on the surface of the first substrate 101, and then annealing the metal film 102, the metal film 102 forms a plurality of metal sea-island structures 1022 on the surface of the first substrate 101;

[0031] Step S3, laying metal nanospheres 103 on the surface of the first substrate 101 formed with the metal sea-island structure 1022, the first substrate 101, the metal sea-island structure 1022 and the metal nanosphere 103 form a Composite structure 104, defining the surface of the composite structure 104 paved with the metal nanospheres ...

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Abstract

A method for preparing a nanometer device, comprising: providing a first substrate; depositing a metal film on the surface of the first substrate, and annealing the metal film to form a metal sea-island structure on the surface of the first substrate; Metal nanospheres are paved on the surface of the first substrate formed with a metal sea-island structure, the first substrate, the metal sea-island structure and the metal nanospheres form a composite structure, and the composite structure is paved with metal nanospheres. The surface of the ball is defined as the first surface, and the composite structure is baked; a photoresist layer is formed on the first surface of the composite structure; a second substrate is provided, and a release mold is formed on the surface of the second substrate. and in a vacuum environment, the photoresist layer on the surface of the composite structure and the release agent layer on the surface of the second substrate are pressed together, the temperature is raised in stages, and the first A voltage is applied to the substrate and the second substrate to form a fractal nanostructure on the surface of the first substrate.

Description

technical field [0001] The invention belongs to the field of nanometer devices, in particular to a preparation method of nanometer devices. Background technique [0002] Nano-manufacturing technology is to manufacture various nano-sized structures on semiconductors, metals and other materials according to application needs. This structure combines the characteristics of the material itself with certain unique properties, which is called a nano-device. [0003] With the rapid development of contemporary integrated circuit technology, the characteristic size of integrated devices has entered the nanometer level, and the proportional reduction of the characteristic size of the device has made the analysis of the physical characteristics of the device also enter the analysis level of quantum mechanics. Nano-devices are very different from traditional devices in electricity, and their performance is much better than traditional electronic devices, mainly reflected in the characte...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00B82Y40/00
CPCB82B3/0042B82Y40/00B82Y20/00H01L21/4846H01L24/11H01L21/47H01L21/02601H01L21/477H01L21/02513H01L24/14H01L24/17H01L21/4853
Inventor 朱振东李群庆范守善
Owner TSINGHUA UNIV