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Binary splitting method for bar splitting of semiconductor laser

A technology of lasers and strips, applied in the structure of optical waveguide semiconductors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of cavity surface extrusion, waste, low production efficiency, etc. efficiency and cost savings

Active Publication Date: 2018-11-16
潍坊华光光电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in the field of laser manufacturing, the existing method of wafer stripping is to split the wafers one by one after scribing, and there will be a large amount of cavity surface extrusion, which cannot be put into production in normal batches, resulting in great waste and low production efficiency. low

Method used

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  • Binary splitting method for bar splitting of semiconductor laser
  • Binary splitting method for bar splitting of semiconductor laser
  • Binary splitting method for bar splitting of semiconductor laser

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Experimental program
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Effect test

Embodiment 1

[0040] Step c) during split operation, the lower end of the semicircle 3 is provided with a horn 5, the upper end of the horn 5 is a plane 6 parallel to the horizontal plane, the outer end of the plane 6 is an angle with the inclined plane 7, and the angle between the inclined plane 7 and the plane 6 A ridge line 8 extending along the length direction of the horn 5 is formed at the place, the lower end of the semicircle 3 is in contact with the plane 6, and the first split line coincides with the ridge line 8 . By setting the pad iron 5, the side of the semicircle 3 is not in contact with the inclined surface 7, so that the lobes can be completed at the ridge line 8 after applying pressure, and the problem of crushing the cavity surface of the bar during the lobing process is greatly reduced. High product utilization efficiency.

Embodiment 2

[0042] During step d) in the split operation, the horn 5 is set at the lower end of the sector, the upper end of the horn 5 is a plane 6 parallel to the horizontal plane, the outer end of the plane 6 is the inclined plane 7, the angle between the inclined plane 7 and the plane 6 A ridge line 8 extending along the length direction of the shim 5 is formed, the lower end of the fan-shaped piece is in contact with the plane 6 , and the second split line coincides with the ridge line 8 . By setting the pad iron 5, there is no contact between one side of the sector and the inclined surface 7, so that the lobes can be completed at the ridge line 8 after applying pressure, and the problem of crushing the cavity surface of the bar during the lobing process is greatly reduced. product utilization efficiency.

Embodiment 3

[0044]During the splitting operation in step f), the pad iron 5 is set at the lower end of the wafer block, the upper end surface of the pad iron 5 is a plane 6 parallel to the horizontal plane, the outer end of the plane 6 is the slope 7, and the angle between the slope 7 and the plane 6 A ridge line 8 extending along the length direction of the pad iron 5 is formed at the position, the lower end of the wafer block is in contact with the plane 6, and the split line coincides with the ridge line 8 . By setting the pad iron 5, there is no contact between one side of the wafer block and the inclined surface 7, so that the split can be completed at the ridge line 8 after applying pressure, and the problem of crushing the cavity surface of the bar during the split process is greatly reduced. High product utilization efficiency.

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Abstract

A binary splitting method for bar splitting of a semiconductor laser comprises the steps of a) dividing a wafer into two equal semicircular slices; b) coating the semicircular slices with films; c) dividing each semicircular slice into two equal fan-shaped slices; d) cutting each fan-shaped slice into two equal wafer blocks; e) determining whether the width of each wafer block is 2 to 3 times greater than the width of a bar, and stopping separation when the width of the wafer block is 2 to 3 times less than the width of the bar, or executing the step f) when the width of the wafer block is 2 to 3 times greater than the width of the bar; f) performing a splitting operation along a splitting line in order to separate the wafer block; and g) operating the wafer block separated in the step f)according to the method in the step e). The method solves the severe crushing of a cavity surface when splitting a wafer into bars one by one, greatly improves the product quality under the premise ofensuring production efficiency so as to greatly improve the rate of finished products, reduces the indentations on the P-face and the N-face of the bar in a splitting process, ensures quality, savescost and improves production efficiency.

Description

technical field [0001] The invention relates to the technical field of laser manufacturing, in particular to a method for binary splitting of a strip used for semiconductor lasers. Background technique [0002] After decades of development, semiconductor lasers have become more and more well-known to the society and have been applied in many fields. The photoelectric conversion efficiency of semiconductor lasers is above 60%, which is much higher than that of other similar products. The advantages of low energy consumption, less heat accumulation in the device, long life, good collimation, and long lighting distance are more and more widely used as an emerging technology in similar industries in society. The various advantages of semiconductor lasers determine that they are getting more and more attention from all walks of life. [0003] Wafer refers to the silicon wafer used in the manufacture of silicon semiconductor integrated circuits. Because of its circular shape, it ...

Claims

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Application Information

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IPC IPC(8): H01L21/67H01L21/78H01S5/22
CPCH01L21/67092H01L21/78H01S5/22
Inventor 贾旭涛赵克宁刘丽青张广明肖成峰
Owner 潍坊华光光电子有限公司
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