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Flash memory life test method based on error mode

A technology of life test and error mode, applied in information storage, static memory, read-only memory, etc., can solve the problems of long time consumption and high detection cost, and achieve the effect of high accuracy

Active Publication Date: 2018-11-20
FUTUREPATH TECH
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

However, this method of testing takes a long time and costs a lot, which has become an important factor limiting the production efficiency of flash memory chips

Method used

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  • Flash memory life test method based on error mode
  • Flash memory life test method based on error mode
  • Flash memory life test method based on error mode

Examples

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Embodiment Construction

[0032] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0033] figure 1 It is a flow chart of using a test pattern based on life prediction according to an embodiment of the present invention. The flow chart of using a flash memory chip test pattern based on life prediction shown in the figure is applicable to all types of flash memory chips. The following uses a kind of flash memory chip product as an example for figure 1 Give a detailed explanation.

[0034] It should be noted that, in order to facilitate the description of the method, in this embodiment, the test patterns for accelerated wear and the test patterns for stimulating errors are integrated into a life test process. However, in practical applications, since the test pattern for accelerating wear and the te...

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Abstract

The invention relates to a flash memory life test method based on an error mode. The method comprises the following steps: extracting a sample flash memory and connecting a sample flash memory chip with a flash memory test system; writing a test pattern accelerating wearing or a test pattern exciting an error into the flash memory; reading the data in the sample flash memory, recording the original error bit rate and comparing the original error bit rate with the ECC error correction capability of the sample flash memory; and repeating the read and write operation on the sample flash memory chip when the original error bit rate is less than the ECC error correction capability, or the sample flash memory is proved to be damaged and the lifetime of the sample flash memory is the number of erase operation. The characteristics of oxide degradation and present flash memory chip process manufacturing are combined, the specific high-efficiency flash memory test pattern based on the error modeis adopt to accelerate wearing of the flash memory chip and excite the inherent defects of the internal unit of the flash memory chip so as to realize fast flash memory detection.

Description

technical field [0001] The invention relates to the technical field of flash memory testing, in particular to a method for testing the lifetime of flash memory based on an error mode. Background technique [0002] Memory is a memory device used to store information in modern information technology. During the calculation process of electronic equipment, the input raw data, computer programs, intermediate operation results and final operation results are all stored in the memory, which is one of the core components of the development of modern information technology. At present, the memory on the market is mainly divided into: volatile memory and non-volatile memory. Flash memory chip is a kind of non-volatile memory, which can save data for a long time after power failure, and has the advantages of fast data transmission speed, low production cost, and large storage capacity, so it is widely used in electronic devices. [0003] Under the existing flash memory chip structur...

Claims

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Application Information

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IPC IPC(8): G11C16/34
CPCG11C16/349
Inventor 刘政林李腾飞李四林
Owner FUTUREPATH TECH
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