Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Air pressure adjustment device, air pressure adjustment method, and wafer etching equipment

A technology for air pressure adjustment and etching equipment, which is applied to electrical components, circuits, discharge tubes, etc., and can solve problems such as poor sealing of the edges of wafers and electrostatic chucks, generation of pollutants, and unbalanced wafer air pressure.

Active Publication Date: 2020-10-16
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an air pressure adjustment device to solve the problem of unbalanced wafer air pressure in the prior art, resulting in poor sealing of the wafer and the electrostatic chuck edge, and the generation of pollutants

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Air pressure adjustment device, air pressure adjustment method, and wafer etching equipment
  • Air pressure adjustment device, air pressure adjustment method, and wafer etching equipment
  • Air pressure adjustment device, air pressure adjustment method, and wafer etching equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0034] Please refer to Figure 1 to Figure 4 , figure 1 Structural diagram of the air pressure regulating device provided for the embodiment of the present invention; figure 2 Structural diagram of wafer etching equipment provided for the embodiment of the present invention; image 3 The structure diagram of the electrostatic chuck of the wafer etching equipment provided by the embodiment of the present invention; Figure 4 The structural diagram of the air pressure regulating device of the wafer etching equ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an air pressure adjustment device. The air pressure adjustment device comprises a bearing structure, a pressure sheet, a ventilation pipe, an exhaust pipe, an air cylinder, apiston and a valve, wherein a hollow structure is formed between the pressure sheet and the bearing structure, the ventilation pipe and the exhaust pipe are arranged on the bearing structure and communicates with the hollow structure, the air cylinder is arranged on the exhaust pipe and communicates with the exhaust pipe, the piston is arranged in the air cylinder to control air pressure in the air pressure, and the valve is arranged on the ventilation pipe and the exhaust pipe. The pressure sheet and the bearing structure form the hollow structure, so that the bearing structure is hermetically contacted with an edge of the pressure sheet; air in the hollow structure is smooth by the ventilation pipe and the exhaust pipe; and the piston is arranged in the air cylinder, the volume of the air cylinder is adjusted by moving the piston to adjust air pressure in the hollow structure, so that the pressure generated by the air pressure is adjusted, and the air pressure of the pressure sheet is balanced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an air pressure adjustment device, an air pressure adjustment method and wafer etching equipment. Background technique [0002] Plasma etching is an important process in wafer processing. As the feature size of wafer processing advances from micron to nanotechnology nodes, the semiconductor process has stricter requirements on wafer defects. The temperature of the wafer needs to be controlled not to be too high during the plasma etching process. The electrostatic chuck is an important part for fixing the wafer and controlling the temperature of the wafer. The electrostatic chuck fixes the wafer through the electrostatic adsorption force generated by the insulating layer, and through The cooling gas in the channels of the insulating layer stabilizes the wafer surface at the set temperature. [0003] In the prior art, when the static electricity is removed, the pressure generated by ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/32449
Inventor 袁鹏华
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com