Wafer inspection system and wafer inspection method

Abstract

The invention discloses a wafer inspection system and a wafer inspection method. The wafer inspection system comprises a manipulator, a controller and a polarization camera, the manipulator is used for acquiring and transmitting a wafer, and the manipulator sends out an image acquisition signal when the manipulator moves to a preset image acquisition position; the controller is used for receivingthe image acquisition signal and sending out an image generation signal; the polarization camera is used for receiving and executing the image generation signal, so as to photograph an image of the wafer; and the controller is also used for receiving the image of the wafer, matching the image of the wafer with a preset reference image and judging an existential state of the wafer on the manipulator on the basis of a matching result. The wafer inspection system of a structure of the embodiment of the invention acquires the image of the wafer at the preset image acquisition position by utilizingthe polarization camera and can avoid the hot spot problem, caused by relatively high reflectance, of most wafers, thus an inspection result is more accurate.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a wafer detection system and a wafer detection method. Background technique [0002] Generally, physical vapor deposition (Physical Vapor Deposition, PVD) refers to the process of using physical processes to realize material transfer, and transfer atoms or molecules from the source to the surface of the substrate. Its function is to spray some particles with special properties (high strength, wear resistance, heat dissipation, corrosion resistance, etc.) on the matrix with lower performance, so that the matrix has better performance. Common PVD basic methods include vacuum evaporation, sputtering, and ion plating (hollow cathode ion plating, hot cathode ion plating, arc ion plating, active reactive ion plating, radio frequency ion plating, and DC discharge ion plating). [0003] In the production process of PVD process, wafers are transferred back and forth between differ...

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Problems solved by technology

[0005] However, the wafer detection system with the above structure will cause the defect of poor wafer recognition due to the differences in reflectivity, size and flatness of different wafers.

[0006] In addition, when the manipulator passes the sensor, if the sensor is a specular reflection sensor, it needs to be strictly aligned so that the reflected light can be accurately absorbed into the receiver. If the sensor is slightly displaced, the reflected light may not be accurately reflected to the receiver, which may easily cause failure , In addition, if the surface of the wafer is dark and the reflectivity is not enough, the wafer cannot be detected

[0007] Finally, when the manipulator passes the sensor, if the diffuse reflection sensor is used, it also uses the principle of reflection. Therefore, if the size or shape of the wafer does not match the predetermined one, it will also report an error, and it is impossible to accurately calculate the wafer through the duration of the light sensitivity change. Coordinate position on the machine

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