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Selective siarc removal

A selective, pattern transfer technology that can be used in instruments, electrical components, circuits, etc., to solve problems such as new material removal problems

Active Publication Date: 2018-11-23
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, the removal of many of the new materials used for advanced ARC layers such as SiARC layers can be problematic and new processing methods for removing these and other layers are required for microelectronic device production

Method used

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Embodiment Construction

[0041] Systems and methods for selective SiARC removal are presented. One skilled in the relevant art will recognize, however, that the various embodiments may be practiced without one or more of the specific details, or with other alternatives and / or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring aspects of various embodiments of the invention.

[0042]Similarly, for purposes of illustration, specific numbers, materials and configurations are set forth in order to provide a thorough understanding of the present invention. However, the invention may be practiced without these specific details. Furthermore, it should be understood that the various embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale. Like reference numerals refer to like parts throughout when referring to the drawings.

[0043] Througho...

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Abstract

Methods and systems for selective silicon anti-reflective coating (SiARC) removal are described. An embodiment of a method includes providing a substrate in a process chamber, the substrate comprising: a resist layer, a SiARC layer, a pattern transfer layer, and an underlying layer. Such a method may also include performing a pattern transfer process configured to remove the resist layer and create a structure on the substrate, the structure comprising portions of the SiARC layer and the pattern transfer layer. The method may additionally include performing a modification process on the SiARClayer of the structure, the modification converting the SiARC layer into a porous SiARC layer. Further, the method may include performing a removal process of the porous SiARC layer of the structure,wherein the modification and removal processes of the SiARC layer are configured to meet target integration objectives.

Description

technical field [0001] The present invention relates to systems and methods for substrate processing, and more particularly to systems and methods for selectively removing silicon anti-reflective coatings (SiARC) without damaging underlying films. Background technique [0002] Photolithographic processes using radiation-sensitive materials (also referred to herein as "resists") are widely used in the fabrication of semiconductor devices and other patterned structures. In tracking photolithography processing for semiconductor device manufacturing, the following types of processing can be performed sequentially: Photoresist coating where a photoresist solution is applied on a semiconductor wafer to form a photoresist film ; heat treatment for curing the coated photoresist film; exposure treatment for exposing a predetermined pattern on the photoresist film; heat treatment for promoting chemical reaction in the photoresist film after exposure; A photoresist film and a developm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11G03F7/42G03F7/075G03F7/09H01L21/027H01L21/311H01L21/47
CPCH01L21/47G03F7/0752G03F7/094G03F7/11G03F7/42H01L21/02329H01L21/0276H01L21/0332H01L21/31111H01L21/31116H01L21/31155H01L29/66795H01L29/7851H01L21/0234G03F1/46G03F7/091H01L21/0274H01L21/31127G03F1/68H01L21/311H01L21/027H01L21/02126H01L21/02315H01L21/0272H01L21/0331H01L21/30604H01L21/3065
Inventor 希亚姆·斯里达尔王立安德鲁·诺兰浩人大竹谢尔盖·沃罗宁阿洛克·兰詹
Owner TOKYO ELECTRON LTD
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