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Storage device, manufacturing method thereof and electronic equipment comprises same

A technology for memory devices and electronic devices, applied in semiconductor devices, electric solid state devices, circuits, etc., can solve the problems of increased channel resistance, high resistance, and difficulty in stacking multiple vertical devices, and achieves reduction in total resistance, increase in The effect of integration

Active Publication Date: 2018-12-07
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In addition, for vertical devices, it is desirable to use single crystal channel materials, because if polycrystalline channel materials are used, compared with single crystal materials, the channel resistance is greatly increased, making it difficult to stack multiple vertical devices, because This results in an excessively high resistance

Method used

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  • Storage device, manufacturing method thereof and electronic equipment comprises same
  • Storage device, manufacturing method thereof and electronic equipment comprises same
  • Storage device, manufacturing method thereof and electronic equipment comprises same

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Embodiment Construction

[0014] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0015] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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Abstract

The invention discloses a storage device, a manufacturing method thereof, and electronic equipment comprises the storage device. According to an embodiment, the storage device can comprise a pluralityof first columnar active regions formed on a substrate and extending upwards from the substrate, first storage gates formed in the inner side walls of the first columnar active regions, and a multi-layer control gate formed on the outer side wall surrounding the first columnar active regions, wherein each of the first columnar active regions has an annular cross section.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a storage device based on a vertical type device, a manufacturing method thereof, and an electronic device including the storage device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the horizontal type device cannot be easily further scaled down. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, vertical devices are easier to scale down than horizontal devices. Further reduction in device size or increase in integration is desired. [0003] In addition, for vertical devices, it is desirable to use single crystal channel materials, because if ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11556H01L27/11582H10B41/27H10B43/27
CPCH10B41/27H10B43/27
Inventor 朱慧珑
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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