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Amplifier circuit

A technology for amplifier circuits and amplifier transistors, applied to amplifiers, improved amplifiers to improve efficiency, parts of amplifiers, etc., can solve problems such as high harmonic energy and affecting fundamental wave performance of devices, and reduce the second harmonic Effect of power output, reduction of harmonic energy generation, and improvement of efficiency and power

Pending Publication Date: 2018-12-11
ZTE CORP
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Problems solved by technology

[0003] In practical applications, due to its high cut-off frequency characteristics, the gallium nitride transistor can be applied to a higher operating frequency, but it also creates a new problem, that is, the energy of the second and third harmonics of the gallium nitride transistor is relatively low. High, the generation of harmonic energy affects the fundamental performance of the device, so it is necessary to reduce the generation of harmonic energy as much as possible from the design of the device or circuit

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no. 1 example

[0020] figure 1 The structural schematic diagram of the amplifier circuit provided for the first embodiment of the present invention is represented by figure 1 It can be seen that the amplifier circuit 1 provided in this embodiment includes: an amplifier transistor 11, an input matching circuit 12 connected to the gate of the amplifier transistor, and an output matching circuit 13 connected to the drain of the amplifier transistor; the input matching circuit 12 is used for matching The source impedance of the amplifier transistor 11, the output matching circuit 13 includes a harmonic control circuit 131 and a fundamental wave matching circuit 132, the harmonic control circuit 131 is used to short-circuit the harmonic energy of the amplifier transistor at the tube core of the amplifier transistor, and the fundamental Wave matching circuit 132 is used to match the fundamental optimum load impedance of the amplifier transistors.

[0021] In some embodiments, the input matching c...

no. 2 example

[0032] Compared with more traditional technologies such as LDMOS (Laterally Diffused Metal Oxide Semiconductor, laterally diffused metal oxide semiconductor) and GaAs (gallium arsenide), gallium nitride transistors can provide better linear power and efficiency, as well as higher bandwidth . These performance improvements are derived from GaN's wide bandgap semiconductor characteristics, high saturation electron mobility, and high breakdown field. The wide bandgap material also has very high thermal conductivity, enabling GaN-based electronic devices to operate at much higher temperatures than other devices such as silicon or GaAs.

[0033] Due to its high cut-off frequency characteristics, gallium nitride transistors can be applied to higher operating frequencies, but at the same time, new problems arise, that is, the second and third harmonic energy of gallium nitride transistors are relatively high, and the harmonic energy The generation of harmonic energy affects the fund...

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Abstract

An amplifier circuit is provided. The amplifier circuit comprises a harmonic control circuit, wherein the harmonic control circuit makes the harmonic energy of the amplifier transistor short-circuitedat the die of the amplifier transistor, reduces the second harmonic power output of the GaN power amplifier transistor, improves the efficiency and power of the power amplifier, and reduces the generation of harmonic energy in the existing amplifier circuit.

Description

technical field [0001] The invention relates to the field of amplifiers, in particular to an amplifier circuit. Background technique [0002] GaN (Gallium Nitride, gallium nitride) HEMT (High Electron Mobility Transistors, High Electron Mobility Transistors), a new generation of power devices represented by the commercialization in the past two years, and is very competitive in 4G system applications. [0003] In practical applications, due to its high cut-off frequency characteristics, the gallium nitride transistor can be applied to a higher operating frequency, but it also creates a new problem, that is, the energy of the second and third harmonics of the gallium nitride transistor is relatively low. High, the generation of harmonic energy affects the fundamental wave performance of the device, so it is necessary to reduce the generation of harmonic energy as much as possible from the design of the device or circuit. Contents of the invention [0004] An embodiment of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/02
CPCH03F1/0288
Inventor 张华
Owner ZTE CORP
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