A silicon carbide gate can turn off a thyristor

A technology of silicon carbide gates and thyristors, which is applied in thyristors, electrical components, circuits, etc., can solve the problems of large gate trigger current, large forward conduction resistance, and low injection efficiency of P-type cathodes, so as to reduce on-resistance, Effects of lower power consumption and lower minimum gate trigger current

Inactive Publication Date: 2018-12-21
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0004] The purpose of the present invention is to propose a silicon carbide gate-level turn-off thyristor with low injection efficiency, large forwa

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  • A silicon carbide gate can turn off a thyristor
  • A silicon carbide gate can turn off a thyristor
  • A silicon carbide gate can turn off a thyristor

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Embodiment Construction

[0020] The present invention is described in detail below in conjunction with accompanying drawing

[0021] Such as figure 2 As shown, the silicon carbide gate of the present invention can turn off the thyristor, and its cell structure includes a cathode structure, a drift region structure, a gate structure and an anode structure; the cathode structure includes an N-IEB layer 13, an N-type substrate 2 and the cathode metal 1 located on the lower surface of the N-type substrate 2; the drift region structure includes a P-drift region 4 and a P+ field stop layer 3; the gate structure includes an N-gate region 5, an N+ gate heavily doped The impurity region 6 and the gate metal 8 on the upper surface of the N+ gate heavily doped region 6; the anode structure includes the P+ anode region 7 and the metal layer 9 on the upper surface of the P+ anode region 7; it is characterized in that the N-type substrate 2 An N-IEB layer 13 is added between the P+ field stop layer 3 .

[0022] ...

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Abstract

The invention relates to a power semiconductor technology, in particular to a silicon carbide gate turn-off thyristor. The invention modifies the cathode region of the conventional silicon carbide GTOby adding a layer of N-IEB layer (N-type Injection Enhanced Buffer Layer). As the doping concentration of the IEB layer 13 is low, the lifetime and mobility of minority carriers in the region are improved, and the diffusion length of minority carriers in the cathode structure is increased, thereby increasing the injection efficiency of the cathode. As a built-in electric field is generated between the N-type substrate 2 and the IEB layer 13 as a result of the concentration difference, , and the direction thereof is pointed from the N-type substrate 2 to the N-type substrate 3-IEB layer 13, which prevents minority hole from diffusing from N-IEB layer 13 to the N-type substrate 2, thereby reducing the minority hole diffusion current and further increasing the cathode injection efficiency.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, in particular to a silicon carbide gate turn-off thyristor Background technique [0002] In the fields of national defense research and high-tech, pulse power technology has extremely important applications, and now the scope of application is expanding to industrial and civilian fields. Gate turn-off thyristor is an important pulse power device used in pulse power technology. [0003] Gate turn-off thyristors (Gate Turn-off Thyristors, referred to as GTO) is a current-controlled power switch, which can control the conduction of the main current between the cathode and anode of the device by applying current pulse signals of different polarities to the gate. on and off. It has the advantages of high blocking voltage, high current, low forward conduction voltage drop, etc., but the general GTO device is not compact enough in the cell structure, so the diffusion process in the open s...

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Application Information

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IPC IPC(8): H01L29/16H01L21/332H01L29/74
CPCH01L29/1608H01L29/6606H01L29/74
Inventor 陈万军高吴昊邓操左慧玲夏云刘超
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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