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A magnetic tunnel junction

A magnetic tunnel junction, non-magnetic technology, applied in the field of non-volatile storage and logic, can solve the problems of low tunneling magnetoresistance and can not meet the requirements of industrialization

Active Publication Date: 2018-12-21
致真存储(北京)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, at this stage, the index of tunneling magnetoresistivity is still low and cannot meet the requirements of industrialization

Method used

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Experimental program
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Effect test

Embodiment 1

[0026] figure 1 It is a schematic diagram of the core structure of a magnetic tunnel junction. The core structure of the present invention from top to bottom is "first iridium layer / first tungsten layer / first ferromagnetic metal layer / tunneling barrier layer / second ferromagnetic metal layer / second tungsten layer / second iridium layer ". The first iridium layer 1 is the top electrode. The first tungsten layer 2 is a covering layer, which protects the first ferromagnetic metal layer 3 from being oxidized. The first ferromagnetic metal layer 3 is a free layer, and the magnetization direction of the first ferromagnetic metal layer 3 is reversed by using spin transfer torque by passing a write current in the vertical direction of the magnetic tunnel junction. When a top-down write current is applied, the magnetic tunnel junction changes from an antiparallel state to a parallel state, becoming a low-resistance state, and "0" is written; when a bottom-up write current is applied, t...

Embodiment 2

[0030] figure 2It is a schematic diagram of the core structure of a magnetic tunnel junction. The core structure of the present invention from top to bottom is "first iridium layer / first tungsten layer / first ferromagnetic metal layer / tunneling barrier layer / second ferromagnetic metal layer / second tungsten layer / second iridium layer ". The first iridium layer 1 is the top electrode. The first tungsten layer 2 is a covering layer, which protects the first ferromagnetic metal layer 3 from being oxidized. The first ferromagnetic metal layer 3 is a reference layer, and its magnetization direction is fixed. The tunneling barrier layer 4 is used to generate tunneling current. The second ferromagnetic metal layer 5 is a free layer whose magnetization direction can be changed. The second tungsten layer 6 is a seed layer for optimizing the growth process of the second ferromagnetic metal layer 5 . The second iridium layer 7 is the bottom electrode. The electrodes are drawn out o...

Embodiment 3

[0034] image 3 It is a schematic diagram of the core structure of a magnetic tunnel junction. The core structure of the present invention from top to bottom is "first iridium layer / first tungsten layer / first ferromagnetic metal free layer / non-magnetic insertion layer / second ferromagnetic metal free layer / tunneling barrier layer / second Ferromagnetic metal layer / second tungsten layer / second iridium layer" structure. Wherein, the overall structure of "first ferromagnetic metal free layer / nonmagnetic insertion layer / second ferromagnetic metal free layer" is a free layer, and the second ferromagnetic metal layer is used as a reference layer. The first iridium layer 1 is the top electrode. The first tungsten layer is the covering layer 2, which protects the first ferromagnetic metal free layer 31 from being oxidized. The non-magnetic insertion layer 32 is used for ferromagnetic coupling between the first ferromagnetic metal free layer 31 and the second ferromagnetic metal free l...

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Abstract

A magnetic tunnel junction is formed by forming a first iridium lay, a first tungsten layer, a first ferromagnetic metal layer, a tunneling barrier layer, a second ferromagnetic metal layer, a secondtungsten layer, and a second iridium layer. The two ferromagnetic metal layers are a reference layer and a free layer respectively. The magnetization direction of the reference layer is fixed and cannot be reversed; The magnetization direction of the free layer can be reversed. When the magnetization direction of the reference layer is parallel to that of the free layer, the magnetoresistive device exhibits a low resistance state and stores '0' in the binary system; When the magnetization direction of the reference layer is antiparallel to that of the free layer, the magnetoresistive device exhibits a high resistance state, storing a '1' in binary. The invention can generate high tunneling magnetoresistive rate, improve read reliability of magnetic tunnel junction, and reduce device writepower consumption at the same time.

Description

【Technical field】 [0001] The invention relates to a magnetic tunnel junction, which belongs to the technical field of nonvolatile storage and logic. 【Background technique】 [0002] Spintronics aims to use the spin properties of electrons to realize operations such as information storage, transmission and calculation. Magnetic random access memory based on spintronics is one of the most promising new types of memory, which has the advantages of non-volatility and low power consumption. The magnetic tunnel junction is the basic unit of the magnetic random access memory, and its basic structure includes "ferromagnetic metal layer / tunneling barrier layer / ferromagnetic metal layer". The magnetization direction of one of the ferromagnetic metal layers is fixed, called the reference layer; the magnetization direction of the other ferromagnetic metal layer can be reversed, called the free layer; the tunneling barrier layer is mostly made of metal and non-metal oxide materials to ge...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10
CPCH10N50/85H10N50/10G11C11/161G11C11/1673G11C11/1675G11C11/18H10N52/80
Inventor 赵巍胜周家琦
Owner 致真存储(北京)科技有限公司
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