A driver based on a gallium nitride power device and a printed circuit layout

Abstract

The invention relates to a driver based on a gallium nitride power device and a printed circuit layout. A resistor R2, a resistor R1, a variable impedance high-frequency suppressor, a voltage regulating diode and a spike absorption module are between the gallium nitride power transistor and a driving chip. The resistor R2 is connected in parallel to an output terminal of the resistor R2, a resistor R1 and a variable impedance high-frequency suppressor are connected in series are connected with a gate of a GaN power transistor de, and a voltage stabilizing diode is connected in parallel with the resistor R1 and the variable impedance high-frequency suppressor and is connected with an output terminal GND of the driving chip. The spike absorption module is connected in parallel to the drain and source of the output of the gallium nitride power transistor. The invention can ensure stable driving of the gallium nitride power device, reduce the number of components used in the driving circuit, reduce the cost of the driving circuit, restrain the gate driving oscillation of the gallium nitride power transistor under the high frequency operation, reduce the voltage spike in the switching process of the gallium nitride power transistor and other problems.

Description

technical field [0001] The invention belongs to the field of power conversion, in particular to the technical field of DC-AC two-level single-phase and three-phase inverter power conversion, and relates to a driver and a printed circuit layout based on gallium nitride power devices. Background technique [0002] In the field of power conversion applications, increasing the switching frequency of power devices can effectively reduce the output harmonics of energy conversion, obtain better energy output, and achieve higher-precision control effects. However, the reverse recovery energy of traditional silicon power devices is high, which greatly increases The energy loss in the process of power conversion is reduced, and the efficiency of power conversion is reduced. At the same time, the application environment of power conversion also has harsh working conditions such as high temperature. In this environment, the application of traditional silicon power devices has been limite...

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Problems solved by technology

[0008] The publication number is CN102611288A, the application date is March 19, 2012, and the publication date is July 25, 2012. The Chinese patent proposes a three-level drive method for GaN power transistors. This patent is aimed at GaN power transistors. The problem of the large conduction voltage drop of the transistor under the reverse conduction mechanism, reducing the reverse conduction loss, can improve the working efficiency of the converter to a certain extent, but there are similar problems with regard to the driving method and the publication number CN105896992A, which will not be discussed here repeat

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