A method for extracting parameters of piezoelectric monolithic wafer equivalent circuit model

An equivalent circuit model, piezoelectric single crystal technology, applied to piezoelectric effect/electrostrictive or magnetostrictive motors, generators/motors, electrical components, etc., can solve the problem of expensive measuring instruments and achieve low cost effect

Inactive Publication Date: 2018-12-21
TIANJIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Some existing circuit parameter extraction methods rely on measuring the vibration state of the piezoelectric single crystal to calculate and determine the parameters, and the required measuring instruments such as Doppler laser vibrometers are expensive

Method used

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  • A method for extracting parameters of piezoelectric monolithic wafer equivalent circuit model
  • A method for extracting parameters of piezoelectric monolithic wafer equivalent circuit model
  • A method for extracting parameters of piezoelectric monolithic wafer equivalent circuit model

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Embodiment

[0055] In order to make the purpose, technical solutions and advantages of the present invention more clear, the following will give a specific description of the implementation of the present invention in conjunction with examples. To test a piezoelectric single crystal, the experimental determination method of five independent parameters is as follows: one end of the piezoelectric single crystal is fixed on the vibration source, and the other end is free, and the acceleration amplitude of the sinusoidal vibration of 1g is kept constant, and different load resistances are obtained by scanning the vibration frequency R L The relationship curve between the output voltage of the piezoelectric single crystal and the vibration frequency is shown below. Short circuit resonant frequency f sc =556Hz is the frequency value corresponding to the maximum output voltage when the load resistance is 50Ω (approximately short-circuited); open-circuit resonant frequency f oc =576Hz is the ma...

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Abstract

A method for extracting parameters of equivalent circuit model of a piezoelectric monolithic wafer includes such steps of fixing one end of piezoelectric monolithic wafer on vibration source, making the other end, keeping constant sinusoidal vibration acceleration amplitude a, sweeping frequency to obtain relationship curve between output voltage and vibration frequency of piezoelectric monolithicwafer under different load resistances RL; determining the short-circuit resonant frequency fsc, the open-circuit resonant frequency foc, the static capacitance Cmc, the mechanical quality factor Qoc, the mechanical quality factor QML, the maximum power value Popt, the open-circuit resonant voltage Voc ([omega] oc); and calculating the equivalent inductance Lm, the equivalent capacitance Cm, theequivalent resistance Rm, the equivalent input stress VF, the piezoelectric coupling coefficient A and the static capacitance Cmc. The invention can accurately describe the relationship between the output voltage characteristic of the piezoelectric monolithic wafer and the load, the ambient vibration frequency and the acceleration, and the electric measuring instrument required for measuring is low in cost.

Description

technical field [0001] The invention relates to the field of vibration environment energy collection technology and circuit design, and more specifically relates to a method for extracting parameters of a piezoelectric single-chip equivalent circuit model. Background technique [0002] Vibration energy harvesting devices can convert the vibration energy widely present in the environment into electrical energy. The energy conversion methods are divided into three types: electrostatic, electromagnetic and piezoelectric according to the different electromechanical conversion principles. The electrostatic type is realized by the capacity change of the variable capacitor due to vibration. The most attractive feature of this method is that it has IC compatibility, and it can be manufactured by silicon micro-processing technology and mass-produced. But in order to realize voltage constraint or charge constraint across the capacitor, independent power supply support is required. El...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02N2/18H02N2/00
Inventor 马建国赵升周绍华
Owner TIANJIN UNIV
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