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Apparatus for prevention of backside deposition in a spatial ald process chamber

A gas chamber and vacuum technology, applied in the direction of coating, gaseous chemical plating, metal material coating process, etc.

Active Publication Date: 2018-12-21
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Backside deposition can be a problem in batch chambers using multi-wafer pedestal arrangements

Method used

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  • Apparatus for prevention of backside deposition in a spatial ald process chamber
  • Apparatus for prevention of backside deposition in a spatial ald process chamber
  • Apparatus for prevention of backside deposition in a spatial ald process chamber

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Embodiment Construction

[0016] Before describing a few exemplary embodiments of the disclosure, it is to be understood that the disclosure is not limited to the details of construction or process steps set forth in the following description. The disclosure is capable of other embodiments and of being practiced or carried out in various ways.

[0017] "Substrate" as used herein refers to any substrate or material surface formed on a substrate on which film processing is performed during the manufacturing process. For example, depending on the application, substrate surfaces on which processes can be performed include materials such as silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, arsenic Gallium, glass, sapphire, and any other material such as metals, metal nitrides, metal alloys, and other conductive materials. Substrates include, but are not limited to, semiconductor wafers. The substrate may be expose...

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Abstract

Susceptor assemblies comprising a susceptor with a support post are described. The susceptor has a body with a top surface and a bottom surface. The top surface has a plurality of recesses therein. The support post is connected to the bottom surface of the susceptor to rotate the susceptor assembly. The support post includes support post vacuum plenum in fluid communication with a susceptor vacuumplenum in the body of the susceptor. The support post also includes a purge gas line extending through the support post to a purge gas plenum in the body of the susceptor.

Description

technical field [0001] The present disclosure generally relates to devices and methods for preventing backside deposition. More specifically, the present disclosure relates to apparatus and methods for preventing deposition on the backside of a substrate in a spatial atomic layer deposition processing chamber. Background technique [0002] In a spatial atomic layer deposition (ALD) process, a deposition gas may contact the backside of the substrate, resulting in backside deposition. Backside deposition can be an issue in batch chambers using multi-wafer susceptor arrangements. Current batch processing systems have backside deposition of up to 30 millimeters in magnitude around the outer edge of the wafer. Accordingly, there is a need in the art for devices and methods for preventing backside deposition in batch processing chambers. Contents of the invention [0003] One or more embodiments of the present disclosure are directed to a base assembly including a base having...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/458C23C16/455C23C16/44
CPCH01L21/6838H01L21/68735C23C16/4412C23C16/45551C23C16/4584H01L21/68792H01L21/68771H01L21/68764C23C16/458C23C16/4585C23C16/45544C23C16/4408
Inventor J·约德伏斯基A·S·波利亚克
Owner APPLIED MATERIALS INC
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